中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/21/2/027201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

刘宋,颜玉珍,胡梁宾   

  • 收稿日期:2011-07-15 修回日期:2011-10-23 出版日期:2012-01-30 发布日期:2012-01-30
  • 通讯作者: 胡梁宾,lbhu26@yahoo.com E-mail:lbhu26@yahoo.com

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic, and external electric-field induced spin–orbit couplings

Liu Song(刘宋), Yan Yu-Zhen(颜玉珍), and Hu Liang-Bin(胡梁宾)   

  1. Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China
  • Received:2011-07-15 Revised:2011-10-23 Online:2012-01-30 Published:2012-01-30
  • Contact: Hu Liang-Bin,lbhu26@yahoo.com E-mail:lbhu26@yahoo.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10874049).

Abstract: The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Key words: anomalous Hall effect, intrinsic spin-orbit coupling, extrinsic spin-orbit coupling, external electric-field induced spin-orbit coupling

中图分类号:  (Theory of electronic transport; scattering mechanisms)

  • 72.10.-d
72.20.-i (Conductivity phenomena in semiconductors and insulators) 73.50.Jt (Galvanomagnetic and other magnetotransport effects)