Theoretical description of electron-phonon Fock space for gapless and gapped nanowires

doi:10.1088/1674-1056/26/3/036302

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 36302-036302.doi: 10.1088/1674-1056/26/3/036302

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Theoretical description of electron-phonon Fock space for gapless and gapped nanowires

Ashrafalsadat Shariati, Hassan Rabani, Mohammad Mardaani

1 Department of Physics, Faculty of Science, Shahrekord University, P. O. Box 115, Shahrekord, Iran;
2 Nanotechnology Research Center, Shahrekord University, 8818634141, Shahrekord, Iran

收稿日期:2016-11-05 修回日期:2016-12-11 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Hassan Rabani E-mail:rabani-h@sci.sku.ac.ir
基金资助:
Project supported by the Iranian Nanotechnology Initiative. This work has also been supported by Shahrekord University through a research fund.

Theoretical description of electron-phonon Fock space for gapless and gapped nanowires

Ashrafalsadat Shariati^1,2, Hassan Rabani^1,2, Mohammad Mardaani^1,2

1 Department of Physics, Faculty of Science, Shahrekord University, P. O. Box 115, Shahrekord, Iran;
2 Nanotechnology Research Center, Shahrekord University, 8818634141, Shahrekord, Iran

Received:2016-11-05 Revised:2016-12-11 Online:2017-03-05 Published:2017-03-05
Contact: Hassan Rabani E-mail:rabani-h@sci.sku.ac.ir
Supported by:
Project supported by the Iranian Nanotechnology Initiative. This work has also been supported by Shahrekord University through a research fund.

摘要/Abstract

摘要： We study the effect of electron-phonon (e-ph) interaction on the elastic and inelastic electronic transport of a nanowire connected to two simple rigid leads within the tight-binding and harmonic approximations. The model is constructed using Green's function and multi-channel techniques, taking into account the local and nonlocal e-ph interactions. Then, we examine the model for the gapless (simple chain) and gapped (PA-like nanowire) systems. The results show that the tunneling conductance is improved by the e-ph interaction in both local and nonlocal regimes, while for the resonance conductance, the coherent part mainly decreases and the incoherent part increases. At the corresponding energies which depend on the phonon frequency, two dips in the elastic and two peaks in the inelastic conductance spectra appear. The reason is the absorption of the phonon by the electron in transition into inelastic channels.

Abstract: We study the effect of electron-phonon (e-ph) interaction on the elastic and inelastic electronic transport of a nanowire connected to two simple rigid leads within the tight-binding and harmonic approximations. The model is constructed using Green's function and multi-channel techniques, taking into account the local and nonlocal e-ph interactions. Then, we examine the model for the gapless (simple chain) and gapped (PA-like nanowire) systems. The results show that the tunneling conductance is improved by the e-ph interaction in both local and nonlocal regimes, while for the resonance conductance, the coherent part mainly decreases and the incoherent part increases. At the corresponding energies which depend on the phonon frequency, two dips in the elastic and two peaks in the inelastic conductance spectra appear. The reason is the absorption of the phonon by the electron in transition into inelastic channels.

中图分类号: (Phonon-electron interactions)

63.20.kd

72.10.-d (Theory of electronic transport; scattering mechanisms) 73.23.-b (Electronic transport in mesoscopic systems) 78.67.Uh (Nanowires)

Ashrafalsadat Shariati,Hassan Rabani,Mohammad Mardaani. Theoretical description of electron-phonon Fock space for gapless and gapped nanowires[J]. 中国物理B, 2017, 26(3): 36302-036302.

Ashrafalsadat Shariati, Hassan Rabani, Mohammad Mardaani. Theoretical description of electron-phonon Fock space for gapless and gapped nanowires[J]. Chin. Phys. B, 2017, 26(3): 36302-036302.

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Theoretical description of electron-phonon Fock space for gapless and gapped nanowires

Theoretical description of electron-phonon Fock space for gapless and gapped nanowires

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