Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

doi:10.1088/1674-1056/21/12/128504

Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 128504-128504.doi: 10.1088/1674-1056/21/12/128504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

王天虎, 徐进良

Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China

收稿日期:2012-05-10 修回日期:2012-06-10 出版日期:2012-11-01 发布日期:2012-11-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004 and 50825603) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 12QX14 and 11ZG01).

Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良)

Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University, Beijing 102206, China

Received:2012-05-10 Revised:2012-06-10 Online:2012-11-01 Published:2012-11-01
Contact: Xu Jin-Liang E-mail:xjl@ncepu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1034004 and 50825603) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 12QX14 and 11ZG01).

摘要/Abstract

摘要： In this study, the characteristics of the nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, carrier concentration in the quantum well, internal quantum efficiency, and light output power are systematically investigated. The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction. These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the less polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.

关键词: light-emitting diodes, internal quantum efficiency, efficiency droop, last barrier

Abstract: In this study, the characteristics of the nitride-based light-emitting diodes with different last barrier structures are analysed numerically. The energy band diagrams, electrostatic field near the last quantum barrier, carrier concentration in the quantum well, internal quantum efficiency, and light output power are systematically investigated. The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction. These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the less polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.

Key words: light-emitting diodes, internal quantum efficiency, efficiency droop, last barrier

中图分类号: (Light-emitting devices)

85.60.Jb

85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)

王天虎, 徐进良. Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure[J]. Chin. Phys. B, 2012, 21(12): 128504-128504.

Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良). Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure[J]. Chin. Phys. B, 2012, 21(12): 128504-128504.

参考文献 22

[1]	Krames M R, Shchekin O B, Mueller-Mach R, Müller G O, Zhou L, Harbers G and Craford M G 2007 IEEE J. Disp. Technol. 3 160
[2]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[3]	Gardner N F, Müller G O, Shen Y C, Chen G, Watanabe S, Götz W and Krames M R 2007 Appl. Phys. Lett. 91 243506
[4]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 108504
[5]	Gong C C, Fan G H, Zhang Y Y, Xu Y Q, Liu X P, Zheng S W, Yao G R and Zhou D T 2012 Chin. Phys. B 21 068505
[6]	Schubert M F, Xu J, Kim J K, Schubert E F, Kim M H, Yoon S, Lee S M, Sone C, Sakong T and Park Y 2008 Appl. Phys. Lett. 93 041102
[7]	Zhang Y Y and Fan G H 2011 Chin. Phys. B 20 048502
[8]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[9]	Rozhansky I V and Zakheim D A 2007 Phys. Status Solidi A 204 227
[10]	Xie J, Ni X, Fan Q, Shimada R, Özgür Ü and Morkoc H 2008 Appl. Phys. Lett. 93 121107
[11]	Ni X, Fan Q, Shimada R, Özgür Ü and Morkoc H 2008 Appl. Phys. Lett. 93 171113
[12]	Wang C H, Ke C C, Lee C Y, Chang S P, Chang W T, Li J C, Li Z Y, Yang H C, Kuo H C, Lu T C and Wang S C 2010 Appl. Phys. Lett. 97 261103
[13]	Wu L J, Li S T, Liu C, Wang H L, Lu T P, Zhang K, Xiao G W, Zhou Y G, Zheng S W, Yin Y A and Yang X D 2012 Chin. Phys. B 21 068506
[14]	Chen J, Fan G H, Zhang Y Y, Pang W, Zheng S W and Yao G R 2012 Chin. Phys. B 21 058504
[15]	Chen J R, Lu T C, Kuo H C, Fang K L, Huang K F, Kuo C W, Chang C J, Kuo C T and Wang S C 2010 IEEE Photon. Technol. Lett. 22 860
[16]	Yen S H, Tsai M L, Tsai M C, Chang S J and Kuo Y K 2010 IEEE Photon. Technol. Lett. 22 1787
[17]	Kuo Y K, Tsai M C, Yen S H, Hsu T C and Shen Y J 2010 IEEE J. Quantum Electron 46 1214
[18]	APSYS by Crosslight Software Inc., Burnaby, Canada (http://www.crosslight.com)
[19]	Chuang S L and Chang C S 1996 Phys. Rev. B 54 2491
[20]	Chuang S L and Chang C S 1997 Semicond. Sci. Technol. 12 252
[21]	Fiorentini V, Bernardini F and Ambacher O 2002 Appl. Phys. Lett. 80 1204
[22]	Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675

Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 22

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507.
[2]	Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.
[3]	Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Large-area fabrication: The next target of perovskite light-emitting diodes[J]. 中国物理B, 2021, 30(8): 88502-088502.
[4]	Mu-Zhen Li(李慕臻), Fei-Yan Li(李飞雁), Qun Zhang(张群), Kai Zhang(张凯), Yu-Zhi Song(宋玉志), Jian-Zhong Fan(范建忠), Chuan-Kui Wang(王传奎), and Li-Li Lin(蔺丽丽). Theoretical verification of intermolecular hydrogen bond induced thermally activated delayed fluorescence in SOBF-Ome[J]. 中国物理B, 2021, 30(12): 123302-123302.
[5]	Byung-Ryool Hyun, Mikita Marus, 钟华英, 李德鹏, 刘皓宸, 谢阅, Weon-kyu Koh, 徐冰, 刘言军, 孙小卫. Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals[J]. 中国物理B, 2020, 29(1): 18503-018503.
[6]	王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. 中国物理B, 2019, 28(8): 87802-087802.
[7]	李光, 王林媛, 宋伟东, 姜健, 罗幸君, 郭佳琦, 贺龙飞, 张康, 吴启保, 李述体. Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer[J]. 中国物理B, 2019, 28(5): 58502-058502.
[8]	张东炎, 张洁, 刘晓峰, 陈沙沙, 李慧文, 刘明庆, 叶大千, 王笃祥. Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs[J]. 中国物理B, 2019, 28(4): 48501-048501.
[9]	王燕丽, 李培咸, 许晟瑞, 周小伟, 张心禹, 姜思宇, 黄茹雪, 刘洋, 訾亚丽, 吴金星, 郝跃. Double superlattice structure for improving the performance of ultraviolet light-emitting diodes[J]. 中国物理B, 2019, 28(3): 38502-038502.
[10]	吴倩倩, 曹璠, 孔令媚, 杨绪勇. InP quantum dots-based electroluminescent devices[J]. 中国物理B, 2019, 28(11): 118103-118103.
[11]	李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803.
[12]	万荣桥, 李滔, 刘志强, 伊晓燕, 王军喜, 李军辉, 朱文辉, 李晋闽, 汪炼成. Current diffusion and efficiency droop in vertical light emitting diodes[J]. 中国物理B, 2019, 28(1): 17203-017203.
[13]	王林媛, 宋伟东, 胡文晓, 李光, 罗幸君, 汪虎, 肖稼凯, 郭佳琦, 王幸福, 郝锐, 易翰翔, 吴启保, 李述体. Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer[J]. 中国物理B, 2019, 28(1): 18503-018503.
[14]	Abida Perveen, 张欣, 汤加仑, 韩登宝, 常帅, 邓罗根, 纪文宇, 钟海政. Sputtered gold nanoparticles enhanced quantum dot light-emitting diodes[J]. 中国物理B, 2018, 27(8): 86101-086101.
[15]	程立文, 马剑, 曹常锐, 徐作政, 兰天, 杨金彭, 陈海涛, 于洪岩, 吴曙东, 尧舜, 曾祥华, 徐仔全. Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers[J]. 中国物理B, 2018, 27(8): 88504-088504.