中国物理B ›› 2012, Vol. 21 ›› Issue (11): 117304-117304.doi: 10.1088/1674-1056/21/11/117304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects

刘宁炀, 刘磊, 王磊, 杨薇, 李丁, 李磊, 曹文彧, 鲁辞莽, 万成昊, 陈伟华, 胡晓东   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2012-04-05 修回日期:2012-07-03 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076012, 61076013, and 51102003), the National High Technology Research and Development Program of China (Grant No. 2007AA03Z403), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014), and the National Basic Research Program of China (Grant No. 2012CB619304).

Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects

Liu Ning-Yang (刘宁炀), Liu Lei (刘磊), Wang Lei (王磊), Yang Wei (杨薇), Li Ding (李丁), Li Lei (李磊), Cao Wen-Yu (曹文彧), Lu Ci-Mang (鲁辞莽), Wan Cheng-Hao (万成昊), Chen Wei-Hua (陈伟华), Hu Xiao-Dong (胡晓东 )   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2012-04-05 Revised:2012-07-03 Online:2012-10-01 Published:2012-10-01
  • Contact: Hu Xiao-Dong E-mail:huxd@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076012, 61076013, and 51102003), the National High Technology Research and Development Program of China (Grant No. 2007AA03Z403), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014), and the National Basic Research Program of China (Grant No. 2012CB619304).

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摘要： We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices (SLs). It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1× 1017 to 9.3× 1017 cm-3, when an AlN interlayer is inserted to modulate the strains. Schrödinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrum for SLs with an AlN interlayer. This supports the theoretical calculations and indicates that, the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.

关键词: superlattice, doping efficiency, strain modulation, nitrogen vacancy

Abstract: We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices (SLs). It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1× 1017 to 9.3× 1017 cm-3, when an AlN interlayer is inserted to modulate the strains. Schrödinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrum for SLs with an AlN interlayer. This supports the theoretical calculations and indicates that, the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.

Key words: superlattice, doping efficiency, strain modulation, nitrogen vacancy

中图分类号:  (Superlattices)

  • 73.21.Cd
71.55.Eq (III-V semiconductors) 78.66.Fd (III-V semiconductors)