Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

doi:10.1088/1674-1056/21/11/117305

中国物理B ›› 2012, Vol. 21 ›› Issue (11): 117305-117305.doi: 10.1088/1674-1056/21/11/117305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

刘宁^{a b}, 金鹏^a, 王占国^a

a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Electricity Examination Department, Patent Examination Cooperation Center of the Patent Office, State Intellectual Property Office, Beijing 100190, China

收稿日期:2012-06-05 修回日期:2012-07-19 出版日期:2012-10-01 发布日期:2012-10-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, and 60776037).

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

Liu Ning (刘宁)^{a b}, Jin Peng (金鹏)^a, Wang Zhan-Guo^a

a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Electricity Examination Department, Patent Examination Cooperation Center of the Patent Office, State Intellectual Property Office, Beijing 100190, China

Received:2012-06-05 Revised:2012-07-19 Online:2012-10-01 Published:2012-10-01
Contact: Jin Peng E-mail:pengjin@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086, and 60776037).

摘要/Abstract

摘要： We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

关键词: quantum dots, broadband spectrum, superluminescent diode

Abstract: We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structural properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

Key words: quantum dots, broadband spectrum, superluminescent diode

中图分类号: (Quantum dots)

73.21.La

78.67.Hc (Quantum dots) 85.60.Jb (Light-emitting devices)

刘宁, 金鹏, 王占国 . Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots[J]. 中国物理B, 2012, 21(11): 117305-117305.

Liu Ning (刘宁), Jin Peng (金鹏), Wang Zhan-Guo (王占国 ). Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots[J]. Chin. Phys. B, 2012, 21(11): 117305-117305.

参考文献 30

[1]	Jin P, Lv X Q, Liu N, Zhang Z Y and Wang Z G 2010 The 3rd IEEE International NanoElectornics Conference, January 3-8, Hongkong, China, Vol. 1-2, p. 304
[2]	Zhang Z Y, Hogg R A, Lv X Q and Wang Z G 2010 Advances in Optics and Photonics 2 201
[3]	Zhang Z Y, Jiang Q, Luxmoore I J and Hogg R A 2009 Nanotechnology 20 055204
[4]	Djie H S, Ooi B S, Fang X M, Wu Y, Fastenau J M, Liu W K and Hopkinson M 2007 Opt. Lett. 32 44
[5]	Rossetti M, Li L H, Markus A, Fiore A, Occhi L, Velez C, Mikhrin S, Krestnikov I and Kovsh A 2007 IEEE J. Quantum Electron. 43 676
[6]	Ngo C Y, Yoon S F, Fan W J and Chua S J 2007 Appl. Phys. Lett. 91 191901
[7]	Heo D C, Song J D, Choi W J, Lee J L, Jung J C and Han I K 2003 Electronics Letters 39 863
[8]	Li X K, Liang D C, Jin P, An Q, Wei H, Wu J and Wang Z G 2012 Chin. Phys. B 21 028102
[9]	Liang D C, An Q, Jin P, Li X K, Wei H, Wu J and Wang Z G 2011 Chin. Phys. B 20 108503
[10]	Kovsh A, Krestnikov I, Livshits D, Mikhrin S, Weimert J and Zhukov A 2007 Opt. Lett. 32 793
[11]	Inoue T, Asada M, Yasuoka N, Kojima O, Kita T and Wada O 2010 Appl. Phys. Lett. 96 211906
[12]	Lv X Q, Jin P, Wang W Y and Wang Z G 2010 Opt. Express 18 8916
[13]	Wu J, Lü X Q, Jin P, Meng X Q and Wang Z G 2011 Chin. Phys. B 20 064202
[14]	Lü X Q, Jin P and Wang Z G 2010 Chin. Phys. B 19 018104
[15]	Lv X Q, Jin P and Wang Z G 2010 IEEE Photonics Technology Letters 22 1799
[16]	Sun Z Z, Ding D, Gong Q, Zhou W, Xu B and Wang Z G 1999 Optical and Quantum Electronics 31 1235
[17]	Zhang Z Y, Wang Z G, Xu B, Jin P, Sun Z Z and Liu F Q 2004 IEEE Photon. Technol. Lett. 16 27
[18]	Liu N, Jin P and Wang Z G 2005 Electronics Letters 41 1400
[19]	Ray S K , Groom K M, Alexander R, Kennedy K, Liu H Y, Hopkinson M and Hogg R A 2006 J. Appl. Phys. 100 103105
[20]	Chen S M, Zhou K J, Zhang Z Y, Childs D T D and Hugues M 2012 Appl. Phys. Lett. 100 041118
[21]	Li L H, Rossetti M, Fiore A, Occhi L and Velez C 2005 Electronics Letters 41 41
[22]	Lv X Q, Liu N, Jin P and Wang Z G 2008 IEEE Photon. Technol. Lett. 20 1742
[23]	Meng X Q, Jin P, Liang Z M, Liu F Q, Wang Z G and Zhang Z Y 2010 J. Appl. Phys. 108 103515
[24]	Haffouz S, Barrios P J, Normandin R, Poitras D and Lu Z 2012 Opt. Lett. 37 1103
[25]	Wang J S, Yu S H, Lin Y R, Lin H H, Yang C S, Chen T T, Chen Y F, Shu G W, Shen J L, Hsiao R S, Chen J F and Chi J Y 2007 Nanotechnology 18 015401
[26]	Xie Q and Madhukar A 1995 Phys. Rev. Lett. 75 2542
[27]	Solomon G S, Trezza J A, Marshall A F and Harris J S 1996 Phys. Rev. Lett. 76 952
[28]	Ilahi B, Sfaxi L, Hassen F, Salem B, Bremond G, Marty O, Bouzaiene L and Maaref H 2006 Materials Science and Engineering C 26 374
[29]	Chan C H, Chen H S, Kao C W, Hsu H P and Huang Y S 2006 J. Appl. Phys. 100 064301
[30]	Xu Z Y, Lu Z D, Yang X P, Yuan Z L, Zheng B Z, Xu J Z, Ge W K, Wang Y, Wang J and Chang L L 1996 Phys. Rev. B 54 11528

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

Broadband light-emitting from multilayer-stacked InAs/GaAs quantum dots

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