中国物理B ›› 2012, Vol. 21 ›› Issue (11): 113601-113601.doi: 10.1088/1674-1056/21/11/113601

• ATOMIC AND MOLECULAR PHYSICS • 上一篇    下一篇

Cluster size and substrate temperature affect thin film formation during copper cluster deposition on Si (001) surface

龚恒风a, 吕炜b, 王鲁闽c, 李公平a   

  1. a School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
    b Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA;
    c Department of Nuclear Engineering and Radiological Science, University of Michigan, Ann Arbor, Michigan 48109, USA
  • 收稿日期:2012-03-15 修回日期:2012-06-05 出版日期:2012-10-01 发布日期:2012-10-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10375028) and the US National Science Foundation Award (Grant No. CMMI-0700048).

Cluster size and substrate temperature affect thin film formation during copper cluster deposition on Si (001) surface

Gong Heng-Feng (龚恒风)a, Lü Wei (吕炜)b, Wang Lu-Min (王鲁闽)c, Li Gong-Ping (李公平 )a   

  1. a School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China;
    b Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA;
    c Department of Nuclear Engineering and Radiological Science, University of Michigan, Ann Arbor, Michigan 48109, USA
  • Received:2012-03-15 Revised:2012-06-05 Online:2012-10-01 Published:2012-10-01
  • Contact: Lü Wei, Li Gong-Ping E-mail:weilu@umich.edu; ligp@lzu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10375028) and the US National Science Foundation Award (Grant No. CMMI-0700048).

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摘要： The soft deposition of Cu clusters on a Si (001) surface was studied by molecular dynamics simulations. The embedded atom method, the Stillinger-Weber and the Lennar-Jones potentials were used to describe the interactions between the cluster atoms, between the substrate atoms, and between the cluster and the substrate atoms, respectively. The Cu13, Cu55, and Cu147 clusters were investigated at different substrate temperatures. We found that the substrate temperature had a significant effect on the Cu147 cluster. For smaller Cu13 and Cu55 clusters, the substrate temperature in the range of study appeared to have little effect on the mean height of mass center. The clusters showed better degrees of epitaxy at 800 K. With the same substrate temperature, the Cu55 cluster demonstrated the highest degree of epitaxy, followed by Cu147 and then Cu13 clusters. In addition, the Cu55 cluster showed the lowest mean height of mass center. These results suggested that the Cu55 cluster is a better choice for the thin-film formation among the clusters considered. Our studies may provide insight into the formation of desired Cu thin films on a Si substrate.

关键词: copper cluster, deposition, epitaxy, diffusion

Abstract: The soft deposition of Cu clusters on a Si (001) surface was studied by molecular dynamics simulations. The embedded atom method, the Stillinger-Weber and the Lennar-Jones potentials were used to describe the interactions between the cluster atoms, between the substrate atoms, and between the cluster and the substrate atoms, respectively. The Cu13, Cu55, and Cu147 clusters were investigated at different substrate temperatures. We found that the substrate temperature had a significant effect on the Cu147 cluster. For smaller Cu13 and Cu55 clusters, the substrate temperature in the range of study appeared to have little effect on the mean height of mass center. The clusters showed better degrees of epitaxy at 800 K. With the same substrate temperature, the Cu55 cluster demonstrated the highest degree of epitaxy, followed by Cu147 and then Cu13 clusters. In addition, the Cu55 cluster showed the lowest mean height of mass center. These results suggested that the Cu55 cluster is a better choice for the thin-film formation among the clusters considered. Our studies may provide insight into the formation of desired Cu thin films on a Si substrate.

Key words: copper cluster, deposition, epitaxy, diffusion

中图分类号:  (Atomic and molecular clusters)

  • 36.40.-c
93.30.Tr (Temperate regions) 46.70.-p (Application of continuum mechanics to structures)