中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87203-087203.doi: 10.1088/1674-1056/20/8/087203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

AlGaInP–Si glue bonded high performance light emitting diodes

陈依新, 沈光地, 郭伟玲, 高志远   

  1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2010-11-07 修回日期:2011-03-29 出版日期:2011-08-15 发布日期:2011-08-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121) and the National Basic Research Program of China (Grant No. 2006CB604900).

AlGaInP–Si glue bonded high performance light emitting diodes

Chen Yi-Xin(陈依新)†, Shen Guang-Di(沈光地), Guo Wei-Ling(郭伟玲), and Gao Zhi-Yuan(高志远)   

  1. Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
  • Received:2010-11-07 Revised:2011-03-29 Online:2011-08-15 Published:2011-08-15
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03A121) and the National Basic Research Program of China (Grant No. 2006CB604900).

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摘要： We propose a new method of using conductive glue to agglutinate GaAs based AlGaInP light emitting diodes (LEDs) onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that AlGaInP—Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.

Abstract: We propose a new method of using conductive glue to agglutinate GaAs based AlGaInP light emitting diodes (LEDs) onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that AlGaInP—Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.

Key words: glue agglutinated, AlGaInP LEDs, Si substrate, luminous intensity

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
82.45.Qr (Electrodeposition and electrodissolution) 74.62.Dh (Effects of crystal defects, doping and substitution) 73.20.At (Surface states, band structure, electron density of states)