Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

doi:10.1088/1674-1056/19/8/088101

中国物理B ›› 2010, Vol. 19 ›› Issue (8): 88101-088101.doi: 10.1088/1674-1056/19/8/088101

Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

孙国胜¹, 刘兴昉¹, 曾一平¹, 李晋闽¹, 王雷², 赵万顺², 杨挺², 吴海雷², 闫果果², 赵永梅³, 宁瑾³

(1)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (3)State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2009-11-13 修回日期:2009-12-22 出版日期:2010-08-15 发布日期:2010-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702).

Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

Sun Guo-Sheng(孙国胜)^a)b)^†, Liu Xing-Fang(刘兴昉)^a)b), Wang Lei(王雷)^b), Zhao Wan-Shun(赵万顺)^b),Yang Ting(杨挺)^b), Wu Hai-Lei(吴海雷)^b), Yan Guo-Guo(闫果果)^b), Zhao Yong-Mei(赵永梅)^c), Ning Jin(宁瑾)^c), Zeng Yi-Ping(曾一平)^a)b), and Li Jin-Min(李晋闽)^a)b)

^a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^c State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China

Received:2009-11-13 Revised:2009-12-22 Online:2010-08-15 Published:2010-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702).

摘要/Abstract

摘要： Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C–SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C–SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH₃ doped n-type 3C–SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C–SiC films are obtained to be 6%～7% and 6.7%～8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

Abstract: Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands. Here we report on results of the heteroepitaxial growth of multi-wafer 3C–SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition (HWLPCVD) system which was designed to be have a high-throughput, multi-wafer (3×2-inch) capacity. 3C–SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies, structures and electronics are characterized systematically. The undoped and the moderate NH₃ doped n-type 3C–SiC films with specular surface are grown in the HWLPCVD, thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C–SiC films are obtained to be 6%～7% and 6.7%～8%, respectively, and within a run, the deviations of wafer-to-wafer thickness and sheet resistance are less than 1% and 0.8%, respectively.

Key words: 3C–SiC, heteroepitaxial, multi-wafer, uniformity

中图分类号: (Nucleation and growth)

68.55.A-

68.35.B- (Structure of clean surfaces (and surface reconstruction)) 71.20.Nr (Semiconductor compounds) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 89.20.Bb (Industrial and technological research and development)

孙国胜, 刘兴昉, 王雷, 赵万顺, 杨挺, 吴海雷, 闫果果, 赵永梅, 宁瑾, 曾一平, 李晋闽. Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates[J]. 中国物理B, 2010, 19(8): 88101-088101.

Sun Guo-Sheng(孙国胜), Liu Xing-Fang(刘兴昉), Wang Lei(王雷), Zhao Wan-Shun(赵万顺),Yang Ting(杨挺), Wu Hai-Lei(吴海雷), Yan Guo-Guo(闫果果), Zhao Yong-Mei(赵永梅), Ning Jin(宁瑾), Zeng Yi-Ping(曾一平), and Li Jin-Min(李晋闽). Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates[J]. Chin. Phys. B, 2010, 19(8): 88101-088101.

参考文献 18

[1]	Zhang Y R, Zhang B, Li Z J, Deng X C and Liu X L 2009 Chin. Phys. B 18 3995
[2]	Kumar M J and Rao D V 2004 IEEE Proceedings-Circ. Dev. Syst. 151 63
[3]	Rahimi R, Miller C M, Munger A, Raghavan S, Stinespring C D and Korakakis D 2009 Mater. Res. Soc. Symp. Proceedings 1129 67
[4]	Patil A, Fu X A, Neudeck P, Beheim G, Mehregany M and Garverick S 2009 Materials Science Forum 600–603 1083
[5]	Mehregany M, Zorman C A, Rajan N and Wu C H 1998 Proceedings of the IEEE 86 1594
[6]	Locke C, Kravchenko G, Waters P, Reddy J D, Du K, Volinsky A A, Frewin C L and Saddow S E 2009 Materials Science Forum 615–617 633
[7]	Davis R F, Kelner G, Shur M, Palmour J W and Edmond J A 1991 Proceedings of the IEEE 79 677
[8]	Roper C S, Radmilovic V, Howe R T and Maboudian R 2008 J. Appl. Phys. 103 084907
[9]	Scholz R, Gosele U, Niemann E, Leidich D and Wischmeyer F 1997 Diam. Relat. Mater. 6 1365
[10]	Burk A A, O'Loughlin M J, Sumakeris J J, Hallin C, Berkman E, Balakrishna V, Young J, Garrett L, Irvine K G and Powell A R 2009 Materials Science Forum bf 600--603 77
[11]	Burk A A, O'Loughlin M J and Mani S S 1998 Silicon Carbide, III--Nitrides and Related Materials Parts 1 and 2 264--2 83
[12]	O'Loughlin M J, Nordby H D and Burk A A 1999 Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 572 161
[13]	Hecht C, Thomas B, Stein R and Friedrichs P 2009 Materials Science Forum bf 600--603 95
[14]	Nishino S, Powell J A and Will H A 1983 Appl. Phys. Lett. 42 460
[15]	Saddow S E, Okhusyen M E, Mazzola M S, Dudley M, Huang X R, Huang W, Su H, Shamsuzzoha M and Lo Y H 1999 III--V and IV--IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics 535 107
[16]	Coletti C, Hetzel M, Virojanadara C, Starke U and Saddow S E 2006 Silicon Carbide 2006---Materials, Processing and Devices 911 131
[17]	Coletti C, Frewin C L, Saddow S E, Hetzel M, Virojanadara C and Starke U 2007 Appl. Phys. Lett. 91 061914
[18]	Gupta A, Sengupta J and Jacob C 2008 Thin Solid Films 516 1669

Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates

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