中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/19/4/047302
叶寒, 芦鹏飞, 俞重远, 姚文杰, 陈智辉, 贾博雍, 刘玉敏
Ye Han(叶寒), Lu Peng-Fei(芦鹏飞), Yu Zhong-Yuan(俞重远)†, Yao Wen-Jie(姚文杰), Chen Zhi-Hui(陈智辉), Jia Bo-Yong(贾博雍), and Liu Yu-Min(刘玉敏)
摘要: We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band $\bm k\cdot \bm p$ theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.
中图分类号: (Quantum dots)