Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

doi:10.1088/1674-1056/25/12/128101

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128101-128101.doi: 10.1088/1674-1056/25/12/128101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

Shi-Yan Li(李士颜), Xu-Liang Zhou(周旭亮), Xiang-Ting Kong(孔祥挺), Meng-Ke Li(李梦珂), Jun-Ping Mi(米俊萍), Meng-Qi Wang(王梦琦), Jiao-Qing Pan(潘教青)

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2015-12-20 修回日期:2016-08-25 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Jiao-Qing Pan E-mail:jqpan@semi.ac.cn
基金资助:
Project supported by the National Science and Technology Major Project of Science and Technology of China (Grant No. 2011ZX02708) and the National Natural Science Foundation of China (Grant No. 61504137).

Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

Shi-Yan Li(李士颜), Xu-Liang Zhou(周旭亮), Xiang-Ting Kong(孔祥挺), Meng-Ke Li(李梦珂), Jun-Ping Mi(米俊萍), Meng-Qi Wang(王梦琦), Jiao-Qing Pan(潘教青)

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2015-12-20 Revised:2016-08-25 Online:2016-12-05 Published:2016-12-05
Contact: Jiao-Qing Pan E-mail:jqpan@semi.ac.cn
Supported by:
Project supported by the National Science and Technology Major Project of Science and Technology of China (Grant No. 2011ZX02708) and the National Natural Science Foundation of China (Grant No. 61504137).

摘要/Abstract

摘要：

This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si (001) substrate by metal-organic vapor-phase epitaxy. Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.

关键词: phase modulation, GaAs, grooves, Si

Abstract:

Key words: phase modulation, GaAs, grooves, Si

中图分类号: (III-V semiconductors)

81.05.Ea

81.05.Cy (Elemental semiconductors) 64.75.Qr (Phase separation and segregation in semiconductors)

李士颜, 周旭亮, 孔祥挺, 李梦珂, 米俊萍, 王梦琦, 潘教青. Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate[J]. 中国物理B, 2016, 25(12): 128101-128101.

Shi-Yan Li(李士颜), Xu-Liang Zhou(周旭亮), Xiang-Ting Kong(孔祥挺), Meng-Ke Li(李梦珂), Jun-Ping Mi(米俊萍), Meng-Qi Wang(王梦琦), Jiao-Qing Pan(潘教青). Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate[J]. Chin. Phys. B, 2016, 25(12): 128101-128101.

参考文献 21

[1]	Zhou X, Tang C W, Li Q and Lau K M 2012 Phys. Status Solidi A 209 1380
[2]	Li J Z, Bai J, Park J S, Adekore B, Fox K, Carroll M and Shellenbarger Z 2007 Appl. Phys. Let. 91 021114
[3]	Ghosh R N, Griffing B and Ballantyne J M 1986 Appl. Phys. Lett. 48 370
[4]	Chen H, Zhang Z, Huang B, Mao L and Zhang Z 2015 J. Semicond. 36 121001
[5]	Xi X W, Chai C C, Liu Y, Yang Y T, Fan Q Y and Shi C L 2016 Chin. Phys. B 25 088504
[6]	Wu L S, Zhao Y, Shen H C, Zhang Y T and Chen T S 2016 Chin. Phys. B 25 067306
[7]	Zhou X, Pan J, Liang R, Wang J and Wang W 2014 J. Semicond. 35 073002
[8]	Krost A, Schnabel R F, Heinrichsdorff F, Rossow U, Bimberg D and Cerva H 1994 J. Cryst. Growth 145 314
[9]	Krost A, Heinrichsdorff F and Bimberg D 1994 Appl. Phys. Lett. 64 769
[10]	Paladugu M, Merckling C, Loo R and Richard O 2012 Cryst. Growth Des. 12 4696
[11]	Wang G, Leys M, Loo R and Richard O 2014 Appl. Phys. Lett. 105 062101
[12]	Li Shi Y, Zhou X L, Kong X T, Li M K, Mi J P, Bian J, Wang W and Pan J Q 2015 Chin. Phys. Lett. 32 028101
[13]	Lee S C, Sun X Y, Hersee S D and Brueck S R J 2004 Appl. Phys. Lett. 8 2079
[14]	Lee S C, Pattada B and Hersee S D 2005 J. Quantum Electron. 41 596
[15]	Zhao D, Zhao D, Jiang D, Liu Z and Zhu J 2015 J. Semicond. 36 063003
[16]	Li S, Zhou X, Kong X, Li M and Mi J 2015 Appl. Phys. Lett. 108 021902
[17]	Bordel D, Guimard D, Rajesh M, Nishioka M and Arakawa Y 2010 Appl. Phys. Lett. 96 043101
[18]	Xu Q, Hsu J W P, Carlin J A, Sieg R M, Boeckl J J and Ringel S A 1999 Appl. Phys. Lett. 75 2111
[19]	Yeh C Y, Lu Z W, Froyen S and Zunger A 1992 Phys. Rev. B 46 10086
[20]	Krost A, Heinrichsdorff F, Bimberg D and Cerva H 1994 Appl. Phys. Lett. 64 769
[21]	Dynna M and Marty A 1998 Acta Mater. 46 1087

Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si (001) substrate

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