Electronic transport for armchair graphene nanoribbons with a potential barrier

doi:10.1088/1674-1056/19/3/037204

中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37204-037204.doi: 10.1088/1674-1056/19/3/037204

Electronic transport for armchair graphene nanoribbons with a potential barrier

周本胡¹, 周本良¹, 周光辉¹, 段子刚²

(1)Department of Physics, Hunan Normal University, Changsha 410081, China; (2)Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

收稿日期:2009-04-07 修回日期:2009-07-02 出版日期:2010-03-15 发布日期:2010-03-15
基金资助:
Project supported by National Natural Science Foundation of China (Grant No.~10974052), and Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20060542002).

Electronic transport for armchair graphene nanoribbons with a potential barrier

Zhou Ben-Hu(周本胡)^a), Duan Zi-Gang(段子刚)^b), Zhou Ben-Liang(周本良)^a), and Zhou Guang-Hui(周光辉)^a)†

^a Department of Physics, Hunan Normal University, Changsha 410081, China; ^b Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

Received:2009-04-07 Revised:2009-07-02 Online:2010-03-15 Published:2010-03-15
Supported by:
Project supported by National Natural Science Foundation of China (Grant No.~10974052), and Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No.~20060542002).

摘要/Abstract

摘要： This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.

Abstract: This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.

Key words: armchair-edge graphene nanoribbon, potential barrier, electronic transport

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

72.20.Dp (General theory, scattering mechanisms)

周本胡, 段子刚, 周本良, 周光辉. Electronic transport for armchair graphene nanoribbons with a potential barrier[J]. 中国物理B, 2010, 19(3): 37204-037204.

Zhou Ben-Hu(周本胡), Duan Zi-Gang(段子刚), Zhou Ben-Liang(周本良), and Zhou Guang-Hui(周光辉). Electronic transport for armchair graphene nanoribbons with a potential barrier[J]. Chin. Phys. B, 2010, 19(3): 37204-037204.

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Electronic transport for armchair graphene nanoribbons with a potential barrier

Electronic transport for armchair graphene nanoribbons with a potential barrier

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