[1] |
Klingshirn C 2007 Chem. Phys. Chem. 8 782
|
[2] |
Tang Z K, Wong G K, Kawasaki P, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1998 Appl. Phys. Lett. 72 3270
|
[3] |
Xu W Z, Ye Z Z, Zhou T, Zhao B H, Zhu L P and Huang J Y 2004 J. Cryst. Growth 265 133
|
[4] |
Kang H S, Ahn B D, Kim J H, Kim G H, Lim S H, Chang H W and Lee S Y 2006 Appl. Phys. Lett. 88 202108
|
[5] |
Du G, Ma Y, Zhang Y and Yang T 2005 Appl. Phys. Lett. 87 213103
|
[6] |
Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 1830
|
[7] |
Rommeluere J F, Svob L, Jomard F, Mimila-Arroyo J, Lusson A, Sallet V and Marfaing Y 2003 Appl. Phys. Lett. 83 287
|
[8] |
Xu W Z, Ye Z Z, Zeng Y J, Zhu L P, Zhao B H, Jiang L, Lu J G, He H P and Zhang S B 2006 Appl. Phys. Lett. 88 173506
|
[9] |
Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
|
[10] |
Yu Zh G, Wu P and Gong H 2006 Appl. Phys. Lett. 88 132114
|
[11] |
Xiu F X, Yang Z, Mandalapu L J, Liu J L and Beyermann W P 2006 Appl. Phys. Lett. 88 052106
|
[12] |
Vaithianathan V, Lee B T and Kima S S 2006 J. Appl. Phys. 98 043519
|
[13] |
Vaithianathan V, Lee B T, Chang Ch H, Asokan K and Kim S S 2006 Appl. Phys. Lett. 88 112103
|
[14] |
Vaithianathan V, Lee B T and Kim S S 2005 Appl. Phys. Lett. 86 062101
|
[15] |
Mandalapu L J, Yang Z, Xiu F X, Zhao D T and Liu J L 2006 Appl. Phys. Lett. 88 092103
|
[16] |
Xiu F X, Yang Z, Mandalapu L J, Zhao D T, Liua J L and Beyermann W P 2005 Appl. Phys. Lett. 87 152101
|
[17] |
Yuan G D, Ye Z Z, Zhu L P, Qian Q, Zhao B H and Fan R X 2005 Appl. Phys. Lett. 86 202106
|
[18] |
Bian J M, Li X M, Zhang C Y and Chen L D 2004 Appl. Phys. Lett. 84 3783
|
[19] |
Dai L P, Deng H, Chen J J and Wei M 2007 Solid State Commun. 143 378
|
[20] |
Zhu Q Y, Ye Z Z, Yuan G D, Huang J Y, Zhu L P, Zhao B H and Lu J G 2006 Appl. Surf. Sci. 253 1903
|
[21] |
Kumar M, Kim T H, Kim S S and Lee B T 2006 Appl. Phys. Lett. 89 112103
|
[22] |
Chen L L, Lu J G, Ye Z Z, Lin Y M, Zhao B H, Ye Y M, Li J S and Zhu L P 2005 Appl. Phys. Lett. 87 252106
|
[23] |
Cao Y, Miao L, Tanemura S, Tanemura M, Kuno Y and Hayashi Y 2006 Appl. Phys. Lett. 88 251116
|
[24] |
Huang G Y, Wang Ch Y and Wang J T 2009 Scripta Materialia 61 324
|
[25] |
Shen Y Q, Mi L, Xu X F, Wu J D, Wang P N, Ying Zh F and Xu N 2008 Solid State Commun. 148 301
|
[26] |
Duan X Y, Zhao Y J and Yao R H 2008 Solid State Commun. 147 194
|
[27] |
Zuo C Y, Wen J and Bai Y L 2010 Chin. Phys. B 19 047101
|
[28] |
Liu X C, Lu ZH and Zhang F M 2010 Chin. Phys. B 19 027502
|
[29] |
Huang G Y, Wang C Y and Wang J T 2010 Chin. Phys. B 19 013101
|
[30] |
Vispute R D, Talyansky V, Choopun S, Sharma P P, Venkatesan T, He M, Tang X, Halpern J B, Spencer M G, Li Y X and Salamanca-Riba L G 1998 Appl. Phys. Lett. 73 348
|
[31] |
Kress G and Furthmuller J 1996 Phys. Rev. B 54 11169
|
[32] |
Hamarm D R, Schhter M and Chiang C 1979 Phys. Rev. Lett. 43 1494
|
[33] |
Perdew J P, Chevary J A, Vosko S H, Jackson K A, Perderson M R and Singh D J 1992 Phys. Rev. B 46 6671
|
[34] |
Schleife A, Fuchs F, Furthmuller J and Bechstedt F 2006 Phys. Rev. B 73 245212
|
[35] |
Wardle M G, Goss J P and Briddon P R 2006 Phys. Rev. Lett. 96 205504
|
[36] |
Imai Y, Watanabe A and Shimono I 2003 J. Mater. Sci. --Mater. Electron. 14 149
|
[37] |
Oshikiri M, Aryasetiawan F, Imanaka Y and Kido G 2002 Phys. Rev. B 66 125204
|
[38] |
Oshikiri M, Imanaka Y, Aryasetiawan F and Kido G 2001 Physica B 298 472
|
[39] |
Zhou C and Kang J 2004 13th International Conference on Semiconducting and Insulating Materials SIMC-XIII-2004, Beijing, September, pp81--84
|
[40] |
Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J. Vac. Sci. Technol. B 22 932
|
[41] |
Wang L and Giles N C 2004 Appl. Phys. Lett. 84 3049
|
[42] |
Thonke K, Gruber Th, Teofilov N, Sch"onfelder R, Waag A and Sauer R 2001 Physica B 308--310 945 endfootnotesize
|