No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

doi:10.1088/1674-1056/19/10/107205

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107205-107205.doi: 10.1088/1674-1056/19/10/107205

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

刘飞, 莫富尧, 李力, 苏赞加, 黄泽强, 邓少芝, 陈军, 许宁生

Key Laboratory of Display Material and Technology of Guangdong Province, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2010-03-18 修回日期:2010-04-23 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the National Basic Research Program of China (973 Program, Grant No. 2007CB935500), 863 Program (Grant No. 2007AA03Z305), Science Foundation for Young Scholars (Grant No. 50802117), the National Joint Science Fund with Guangdong Province (Grant Nos. U0634002 and U0734003), the Doctoral Foundation of Educational Ministry of China (Grant Nos. 20070558063 and 09lgpy28), the Science and Technology Foundation of the Educational Department of Guangdong Province, and the Science and Technology Department of Guangzhou City.

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

Liu Fei(刘飞)^†, Mo Fu-Yao(莫富尧), Li Li(李力), Su Zan-Jia(苏赞加), Huang Ze-Qiang(黄泽强), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生)

Key Laboratory of Display Material and Technology of Guangdong Province, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Received:2010-03-18 Revised:2010-04-23 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the National Basic Research Program of China (973 Program, Grant No. 2007CB935500), 863 Program (Grant No. 2007AA03Z305), Science Foundation for Young Scholars (Grant No. 50802117), the National Joint Science Fund with Guangdong Province (Grant Nos. U0634002 and U0734003), the Doctoral Foundation of Educational Ministry of China (Grant Nos. 20070558063 and 09lgpy28), the Science and Technology Foundation of the Educational Department of Guangdong Province, and the Science and Technology Department of Guangzhou City.

摘要/Abstract

摘要： The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800 ℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550 ℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.

Abstract: The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800 ℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550 ℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.

Key words: AlN nanocone, low-temperature growth, no-catalyst, field-emission

中图分类号: (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))

61.46.Df

71.20.Nr (Semiconductor compounds) 79.70.+q (Field emission, ionization, evaporation, and desorption) 81.16.Hc (Catalytic methods) 85.45.Db (Field emitters and arrays, cold electron emitters)

刘飞, 莫富尧, 李力, 苏赞加, 黄泽强, 邓少芝, 陈军, 许宁生. No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature[J]. 中国物理B, 2010, 19(10): 107205-107205.

Liu Fei(刘飞), Mo Fu-Yao(莫富尧), Li Li(李力), Su Zan-Jia(苏赞加), Huang Ze-Qiang(黄泽强), Deng Shao-Zhi(邓少芝), Chen Jun(陈军), and Xu Ning-Sheng(许宁生). No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature[J]. Chin. Phys. B, 2010, 19(10): 107205-107205.

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No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

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