The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition

doi:10.1088/1674-1056/19/10/107204

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107204-107204.doi: 10.1088/1674-1056/19/10/107204

The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition

曹艳荣¹, 许晟瑞², 郝跃², 张进成², 周小伟², 欧新秀², 毛维², 杜大超², 王昊²

(1)School of Electronical & Mechanical Engineering, Xidian University, Xi'an 710071, China; (2)School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China

收稿日期:2010-04-01 修回日期:2010-06-02 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009).

The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition

Xu Sheng-Rui(许晟瑞)^a)†, Hao Yue(郝跃)^a), Zhang Jin-Cheng(张进成)^a), Zhou Xiao-Wei(周小伟)^a), Cao Yan-Rong(曹艳荣)^b), Ou Xin-Xiu(欧新秀)^a), Mao Wei(毛维)^a), Du Da-Chao(杜大超)^a), and Wang Hao(王昊)^a)

^a School of Microelectronics, Xidian University, Xi'an 710071, China and National Key Laboratory of Fundamental Science on Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China; ^b School of Electronical & Mechanical Engineering, Xidian University, Xi'an 710071, China

Received:2010-04-01 Revised:2010-06-02 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009).

摘要/Abstract

摘要： Morphology of nonpolar (112^-0) a-plane GaN epilayers on r-plane (11^-02) sapphire substrate grown by low-pressure metal--organic vapour deposition was investigated after KOH solution etching. Many micron- and nano-meter columns on the a-plane GaN surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane GaN plays a very important role in the etching process.

Abstract: Morphology of nonpolar (1120) a-plane GaN epilayers on r-plane (1102) sapphire substrate grown by low-pressure metal–organic vapour deposition was investigated after KOH solution etching. Many micron- and nano-meter columns on the a-plane GaN surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane GaN plays a very important role in the etching process.

Key words: crystal morphology, stacking fault, nonpolar GaN, chemical etching

中图分类号: (Stacking faults and other planar or extended defects)

61.72.Nn

68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.55.-a (Thin film structure and morphology) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 81.65.Cf (Surface cleaning, etching, patterning)

许晟瑞, 郝跃, 张进成, 周小伟, 曹艳荣, 欧新秀, 毛维, 杜大超, 王昊. The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition[J]. 中国物理B, 2010, 19(10): 107204-107204.

Xu Sheng-Rui(许晟瑞), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Cao Yan-Rong(曹艳荣), Ou Xin-Xiu(欧新秀), Mao Wei(毛维), Du Da-Chao(杜大超), and Wang Hao(王昊). The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition[J]. Chin. Phys. B, 2010, 19(10): 107204-107204.

参考文献 17

[1]	Zhang J F, Zhang J C and Hao Y 2004 Chin. Phys. 13 1338
[2]	Liu J P, Lim J B, Ryou J H, Yoo D, Horne C A, Dupuis R D, Wu Z H, Fischer A M, Ponce F A, Hanser A D, Liu L, Preble E A and Evans K R 2008 Appl. Phys. Lett. 92 011123
[3]	Imer B, Wu F, Spec J S and DenBaars S P 2007 J. Cryst. Growth 306 330
[4]	Huang J J, Tang T Y, Huang C F and Yang C C 2008 J. Cryst. Growth 310 2712
[5]	Stocker D A, Schubert E F and Redwing J M 1998 Appl. Phys. Lett. 73 2654
[6]	Gao Y, Craven M D, Speck J S, DenBaars S P and Hu E L 2004 Appl. Phys. Lett. 84 3322
[7]	Ferdous M S, Sun X Y, Wang X, Fairchild M N and Hersee S D 2006 J. Appl. Phys. 99 096105
[8]	Tavernier P R, Margalith T, Williams J, Greenb D S, Keller S, DenBaarsa S P, Mishra U K, Nakamura S and Clarke D R 2004 J. Cryst. Growth 264 150
[9]	Sumiya M, Yoshimura K, Ito T, Ohtsuka K, Fuke S, Mizuno K, Yoshimoto M, Koinum H, Ohtomo A and Kawasaki M 2000 J. Appl. Phys. 88 1161
[10]	Lu L, Gao Z Y, Shen B, Xu F J, Huang S, Miao Z L, Hao Y, Yang Z J, Zhang G Y, Zhang X P, Xu J and Yu D P 2008 J. Appl. Phys. 104 123525
[11]	Li D S, Sumiy M, Fuke S, Yang D, Que D, Suzuki Y and Fukuda Y 2001 J. Appl. Phys. 90 4219
[12]	Lin C F, Lin C M, Chen K T, Huang W C, Lin M S, Dai J J, Jiang R H, Huang Y C and Chang C Y 2009 Appl. Phys. Lett. 95 201102
[13]	Li D S, Sumiy M, Fuke S, Yang D, Que D, Suzuki Y and Fukuda Y 2001 J. Appl. Phys. 90 4219
[14]	Hollander J L, Kappers M J, McAleese C and Humphreys C J 2008 Appl. Phys. Lett. 92 101104
[15]	Xu S R, Hao Y, Zhang J C, Zhou X W, Yang L A, Zhang J F, Duan H T, Li Z M, Wei M, Hu S G, Cao Y R, Zhu Q W, Xu Z H and Gu W P 2009 J. Cryst. Growth 311 3623
[16]	Wu Z H, Fischer A M, Ponce F A, Yokogawa T, Yoshida S and Kato R 2008 Appl. Phys. Lett. 93 011901
[17]	Johnston C F, Kappers M J and Humphreys C J 2009 J. Appl. Phys. 105 073102 endfootnotesize

The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition

The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition

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