GaP layers grown on GaN with and without buffer layers

doi:10.1088/1674-1056/19/10/107206

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107206-107206.doi: 10.1088/1674-1056/19/10/107206

GaP layers grown on GaN with and without buffer layers

郑树文¹, 苏军¹, 李述体², 曹健兴², 范广涵², 章勇²

(1)Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; (2)Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; Key Laboratory of Electroluminescent Devices of Department of Education of Guangdong Province, Guangzhou 510631, China

收稿日期:2010-03-29 修回日期:2010-04-28 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Natural Science Foundation of Guangdong Province of China (Grant No. 8251063101000007), and the Science and Technology Program of Guangdong Province of China (Grant Nos. 2007498351 and 2009B011100003).

GaP layers grown on GaN with and without buffer layers

Li Shu-Ti(李述体)^a)b)^†, Cao Jian-Xing(曹健兴)^a)b), Fan Guang-Han(范广涵)^a)b), Zhang Yong(章勇)^a)b), Zheng Shu-Wen(郑树文)^a), and Su Jun(苏军)^a)

^a Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China; ^b Key Laboratory of Electroluminescent Devices of Department of Education of Guangdong Province, Guangzhou 510631, China

Received:2010-03-29 Revised:2010-04-28 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Natural Science Foundation of Guangdong Province of China (Grant No. 8251063101000007), and the Science and Technology Program of Guangdong Province of China (Grant Nos. 2007498351 and 2009B011100003).

摘要/Abstract

摘要： The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680℃ is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH₃, while it turned to be polycrystalline when the substrate is pretreated by TEGa.

Abstract: The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680℃ is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH₃, while it turned to be polycrystalline when the substrate is pretreated by TEGa.

Key words: metal-organic chemical vapour deposition, semiconductors, gallium phosphide, gallium nitride, x-ray diffraction

中图分类号: (Structure of clean surfaces (and surface reconstruction))

68.35.B-

68.55.-a (Thin film structure and morphology) 68.55.A- (Nucleation and growth) 73.61.Ey (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

李述体, 曹健兴, 范广涵, 章勇, 郑树文, 苏军. GaP layers grown on GaN with and without buffer layers[J]. 中国物理B, 2010, 19(10): 107206-107206.

Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Fan Guang-Han(范广涵), Zhang Yong(章勇), Zheng Shu-Wen(郑树文), and Su Jun(苏军). GaP layers grown on GaN with and without buffer layers[J]. Chin. Phys. B, 2010, 19(10): 107206-107206.

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GaP layers grown on GaN with and without buffer layers

GaP layers grown on GaN with and without buffer layers

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