Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

doi:10.1088/1674-1056/19/1/017702

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 17702-017702.doi: 10.1088/1674-1056/19/1/017702

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

袁杰¹, 曹茂盛², 宋维力², 侯志灵³

(1)School of Information Engineering, Central University for Nationalities, Beijing 100081, China; (2)School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China; (3)School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;School of Science, Beijing University of Chemical Technology, Beijing 100029, China

收稿日期:2008-12-31 修回日期:2009-06-05 出版日期:2010-01-15 发布日期:2010-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50872159) and the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080).

Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y₂Si₂O₇

Hou Zhi-Ling(侯志灵)^a)b), Cao Mao-Sheng(曹茂盛)^a)†, Yuan Jie(袁杰)^c)‡, and Song Wei-Li(宋维力)^a)

^a School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China; ^b School of Science, Beijing University of Chemical Technology, Beijing 100029, China; ^c School of Information Engineering, Central University for Nationalities, Beijing 100081, China

Received:2008-12-31 Revised:2009-06-05 Online:2010-01-15 Published:2010-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50872159) and the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080).

摘要/Abstract

摘要： This paper reports that single-phase γ -Y₂Si₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of γ -Y₂Si₂O₇ as a function of the temperature and frequency. The γ -Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400~℃C in the range of 7.3--18~GHz. The mechanism for polarization relaxation of the as-prepared γ -Y₂Si₂O₇ differing from that of SiO₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Abstract: This paper reports that single-phase $\gamma$ -Y₂Si₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of $\gamma$ -Y₂Si₂O₇ as a function of the temperature and frequency. The $\gamma$ -Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 ℃ in the range of 7.3--18 GHz. The mechanism for polarization relaxation of the as-prepared $\gamma$ -Y₂Si₂O₇ differing from that of SiO₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Key words: $\gamma$-Y₂Si₂O₇, dielectric properties, structural relaxation polarization, low dielectric loss

中图分类号: (Dielectric loss and relaxation)

77.22.Gm

77.22.Ej (Polarization and depolarization) 81.20.Fw (Sol-gel processing, precipitation)

侯志灵, 曹茂盛, 袁杰, 宋维力. Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇[J]. 中国物理B, 2010, 19(1): 17702-017702.

Hou Zhi-Ling(侯志灵), Cao Mao-Sheng(曹茂盛), Yuan Jie(袁杰), and Song Wei-Li(宋维力). Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y₂Si₂O₇[J]. Chin. Phys. B, 2010, 19(1): 17702-017702.

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Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

Temperature-frequency dependence and mechanism of dielectric properties for $\gamma$-Y₂Si₂O₇

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