中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3024-3030.doi: 10.1088/1674-1056/18/7/068

• • 上一篇    下一篇

Synthesis and electrical characterization of tungsten oxide nanowires

黄睿, 朱静, 于荣   

  1. Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • 收稿日期:2008-11-24 修回日期:2008-12-16 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50671053).

Synthesis and electrical characterization of tungsten oxide nanowires

Huang Rui(黄睿), Zhu Jing(朱静)†, and Yu Rong(于荣)   

  1. Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • Received:2008-11-24 Revised:2008-12-16 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50671053).

PDF (PC)

896

赞

摘要： Tungsten oxide nanowires of diameters ranging from 7 to 200~nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour--solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I--V curves are measured by an \textit{in situ} transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I--V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I--V curves by using a metal--semiconductor--metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Abstract: Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour--solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I--V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I--V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I--V curves by using a metal--semiconductor--metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Key words: tungsten oxide nanowires, chemical vapour deposition (CVD), electrical characterization, metal--semiconductor--metal (MSM) structure

中图分类号:  (Methods of micro- and nanofabrication and processing)

  • 81.16.-c
61.46.-w (Structure of nanoscale materials) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 73.40.Sx (Metal-semiconductor-metal structures) 72.20.Fr (Low-field transport and mobility; piezoresistance) 73.63.Nm (Quantum wires)