中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1665-1668.doi: 10.1088/1674-1056/18/4/064

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Potts-Ising model for simulation of polarization switching in polycrystalline ferroelectrics

张艳飞, 王春雷, 赵明磊, 李吉超, 张睿智   

  1. School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2007-11-27 修回日期:2008-10-23 出版日期:2009-04-20 发布日期:2009-04-20
  • 基金资助:
    Project supported by National Natural Science Foundation of China (Grant No 10474057).

Potts-Ising model for simulation of polarization switching in polycrystalline ferroelectrics

Zhang Yan-Fei(张艳飞)†, Wang Chun-Lei(王春雷), Zhao Ming-Lei(赵明磊), Li Ji-Chao(李吉超), and Zhang Rui-Zhi(张睿智)   

  1. School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2007-11-27 Revised:2008-10-23 Online:2009-04-20 Published:2009-04-20
  • Supported by:
    Project supported by National Natural Science Foundation of China (Grant No 10474057).

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摘要： This paper proposes a scheme based on the Potts and Ising models for simulating polarization switching of polycrystalline ferroelectrics using the Monte Carlo method. The polycrystalline texture with different average grain size is produced from the Potts model. Then Ising model is implemented in the polycrystalline texture to produce the domain pattern and hysteresis loop. The domain patterns and hysteresis loops have been obtained for polycrystalline texture with different average grain size. From the results of domain pattern evolution process under an applied electric field using this scheme, an extended domain, which covers more than one grain with polarization aligned roughly in the same direction, has been observed during the polarization reversal. This scheme can well reproduce the basic properties of polycrystalline ferroelectrics and is a valuable tool for exploring the physical properties of polycrystalline ferroelectrics.

Abstract: This paper proposes a scheme based on the Potts and Ising models for simulating polarization switching of polycrystalline ferroelectrics using the Monte Carlo method. The polycrystalline texture with different average grain size is produced from the Potts model. Then Ising model is implemented in the polycrystalline texture to produce the domain pattern and hysteresis loop. The domain patterns and hysteresis loops have been obtained for polycrystalline texture with different average grain size. From the results of domain pattern evolution process under an applied electric field using this scheme, an extended domain, which covers more than one grain with polarization aligned roughly in the same direction, has been observed during the polarization reversal. This scheme can well reproduce the basic properties of polycrystalline ferroelectrics and is a valuable tool for exploring the physical properties of polycrystalline ferroelectrics.

Key words: grain growth, ferroelectric properties, Potts--Ising model

中图分类号:  (Polarization and depolarization)

  • 77.22.Ej
77.80.Fm (Switching phenomena) 77.80.Dj (Domain structure; hysteresis) 77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)