中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1614-1617.doi: 10.1088/1674-1056/18/4/054

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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

刘芳1, 王涛1, 王鹏1, 姚建铨1, 许福军2, 沈波3, 黄森3, 林芳3, 马楠3   

  1. (1)College of Precision Instrument and Opto-Electronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Key Laboratory of Optoelectric Information Science and Technology of Ministry of Education, Tianjin University, Tianjin 300072,; (2)State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; (3)State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2008-09-15 修回日期:2008-10-29 出版日期:2009-04-20 发布日期:2009-04-20

The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

Liu Fang(刘芳)a), Wang Tao(王涛)a), Shen Bo(沈波)b), Huang Sen(黄森)b), Lin Fang(林芳)b), Ma Nan(马楠)b), Xu Fu-Jun(许福军)b), Wang Peng(王鹏)a), and Yao Jian-Quan(姚建铨)a)   

  1. a College of Precision Instrument and Opto-Electronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Key Laboratory of Optoelectric Information Science and Technology of Ministry of Education, Tianjin University, Tianjin 300072, China; b State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2008-09-15 Revised:2008-10-29 Online:2009-04-20 Published:2009-04-20

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摘要： This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25--350 °C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I--V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I--V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.

关键词: gate leakage current, interface states, tunnelling current, thermionic field emission current

Abstract: This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25--350 °C. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I--V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I--V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.

Key words: gate leakage current, interface states, tunnelling current, thermionic field emission current

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.Hi (Surface barrier, boundary, and point contact devices) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)