中国物理B ›› 2009, Vol. 18 ›› Issue (1): 320-323.doi: 10.1088/1674-1056/18/1/052

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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

闫军锋1, 张志勇1, 赵武2, 汪韬3, 王警卫3   

  1. (1)School of Information Science and Technology, Northwest University, Xi'an 710069, China; (2)School of Information Science and Technology, Northwest University, Xi'an 710069, China;Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China; (3)Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China
  • 收稿日期:2007-10-15 修回日期:2008-08-24 出版日期:2009-01-20 发布日期:2009-01-20
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200), the West Light Plan of China (Grant No 2005ZD01), and the Xi'an Applied Materials Innovation Fund of China (Grant No XA-AM-200613).

Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

Yan Jun-Feng(闫军锋)a)†, Wang Tao(汪韬)b), Wang Jing-Wei (王警卫)b), Zhang Zhi-Yong(张志勇)a), and Zhao Wu(赵武)a)b)   

  1. a School of Information Science and Technology, Northwest University, Xi'an 710069, China; b Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710068, China
  • Received:2007-10-15 Revised:2008-08-24 Online:2009-01-20 Published:2009-01-20
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200), the West Light Plan of China (Grant No 2005ZD01), and the Xi'an Applied Materials Innovation Fund of China (Grant No XA-AM-200613).

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摘要： Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52×1016cm-3.

关键词: metalorganic chemical vapour deposition (MOCVD), antimonides, semiconducting indium compounds

Abstract: Low pressure metalorganic chemical vapour deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52×1016cm-3.

Key words: metalorganic chemical vapour deposition (MOCVD), antimonides, semiconducting indium compounds

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.55.-a (Thin film structure and morphology) 73.61.Ey (III-V semiconductors) 78.55.Cr (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))