中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97801-097801.doi: 10.1088/1674-1056/19/9/097801

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Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

黄伟其1, 刘家兴1, 蔡成兰1, 吕泉1, 刘世荣2, 秦朝建2   

  1. (1)Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China; (2)State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
  • 收稿日期:2009-12-11 修回日期:2010-04-01 出版日期:2010-09-15 发布日期:2010-09-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10764002 and 60966002), and by the National Key Laboratory of Surface Physics at Fudan University.

Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

Huang Wei-Qi(黄伟其)a)†, Liu Jia-Xing(刘家兴)a), Cai Cheng-Lan(蔡成兰)a), Lü Quan(吕泉)a)‡, Liu Shi-Rong(刘世荣)b)*, and Qin Chao-Jian(秦朝建)b)   

  1. a Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China; b State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
  • Received:2009-12-11 Revised:2010-04-01 Online:2010-09-15 Published:2010-09-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10764002 and 60966002), and by the National Key Laboratory of Surface Physics at Fudan University.

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摘要： Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.

Abstract: Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.

Key words: nitrogen and oxygen, quantum dots, stimulated emission, localised states

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  • 7845