中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2240-2244.doi: 10.1088/1674-1056/17/6/050

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Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques

祖小涛1, 袁兆林1, 向霞1, 薛书文2, 邵乐喜3, 邓宏4   

  1. (1)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (2)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China;Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; (3)Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; (4)School of Microelectronics and Solid-state Electronics, University of Electronic Science and Technology of Chin
  • 收稿日期:2007-10-22 修回日期:2007-12-10 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University (Grant No NCET-04-0899) and Special Foundation for University Subject Construction, Department of Education of Guangdong Province, China (Grant No [2006] 11).

Preparation of p-type ZnO:(Al, N) by a combination of sol--gel and ion-implantation techniques

Xue Shu-Wen(薛书文)a)b)†, Zu Xiao-Tao(祖小涛)a), Shao Le-Xi(邵乐喜)b), Yuan Zhao-Lin(袁兆林)a), Xiang Xia(向霞)a), and Deng Hong(邓宏)c)   

  1. a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; b Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, China; c School of Microelectronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2007-10-22 Revised:2007-12-10 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University (Grant No NCET-04-0899) and Special Foundation for University Subject Construction, Department of Education of Guangdong Province, China (Grant No [2006] 11).

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摘要： We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol--gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600\du\ have converted to p-type conduction with a hole concentration of $1.6\times1018cm-3, a hole mobility of 3.67cm2/V.s and a minimum resistivity of 4.80cm.\Omega$. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600\du. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.

关键词: ZnO, ion implantation, XRD

Abstract: We report the preparation of p-type ZnO thin films on (0001) sapphire substrates by a combination of sol--gel and ion-implantation techniques. The results of the Hall-effect measurements carried out at room temperature indicate that the N-implanted ZnO:Al films annealed at 600℃ have converted to p-type conduction with a hole concentration of 1.6$\times$1018cm-3, a hole mobility of 3.67cm2/V$\cdot$s and a minimum resistivity of 4.80cm$\cdot\Omega$. Ion-beam induced damage recovery has been investigated by x-ray diffraction (XRD), photoluminescence (PL) and optical transmittance measurements. Results show that diffraction peaks and PL intensities are decreased by N ion implantation, but they nearly recover after annealing at 600℃. Our results demonstrate a promising approach to fabricate p-type ZnO at a low cost.

Key words: ZnO, ion implantation, XRD

中图分类号:  (Methods of deposition of films and coatings; film growth and epitaxy)

  • 81.15.-z
73.50.Dn (Low-field transport and mobility; piezoresistance) 73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.Ga (II-VI semiconductors) 78.55.Et (II-VI semiconductors) 81.20.Fw (Sol-gel processing, precipitation)