中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1326-1330.doi: 10.1088/1674-1056/17/4/029

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Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

王公堂, 薛成山, 杨兆柱   

  1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
  • 收稿日期:2007-10-11 修回日期:2007-12-11 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No 90201025).

Growth of $\beta$-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

Wang Gong-Tang(王公堂), Xue Cheng-Shan(薛成山)†, and Yang Zhao-Zhu(杨兆柱)   

  1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
  • Received:2007-10-11 Revised:2007-12-11 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No 90201025).

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摘要： This paper reports that β-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100nm to 200\,nm and lengths typically up to 2\mum. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.

关键词: β--Ga2O3 nanorods, vapour--solid mechanism, V

Abstract: This paper reports that $\beta$-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown $\beta$-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100nm to 200 nm and lengths typically up to 2$\mu$m. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.

Key words: $\beta$--Ga2O3 nanorods, vapour--solid mechanism, V

中图分类号:  (X-ray diffraction)

  • 61.05.cp
68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.47.Fg (Semiconductor surfaces) 78.55.Hx (Other solid inorganic materials) 81.07.Bc (Nanocrystalline materials)