中国物理B ›› 2008, Vol. 17 ›› Issue (2): 680-684.doi: 10.1088/1674-1056/17/2/053

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

陆红霞, 董正超, 付 浩   

  1. Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China
  • 收稿日期:2007-05-07 修回日期:2007-07-23 出版日期:2008-02-20 发布日期:2008-02-20
  • 基金资助:
    Project supported by the Program for Excellent Talents in Huaiyin Teachers College.

Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

Lu Hong-Xia(陆红霞)†, Dong Zheng-Chao(董正超), and Fu Hao(付浩)   

  1. Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China
  • Received:2007-05-07 Revised:2007-07-23 Online:2008-02-20 Published:2008-02-20
  • Supported by:
    Project supported by the Program for Excellent Talents in Huaiyin Teachers College.

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摘要： Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the rough-scattering effect and spin-flip effect.

Abstract: Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the rough-scattering effect and spin-flip effect.

Key words: magnetoresistance, spin-flip effect, rough-scattering

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

  • 75.47.-m
73.40.Gk (Tunneling) 72.25.Mk (Spin transport through interfaces)