Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

doi:10.1088/1674-1056/ac21bb

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17502-017502.doi: 10.1088/1674-1056/ac21bb

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Runrun Hao(郝润润)^1,2,†, Kun Zhang(张昆)^1,2,†, Yinggang Li(李迎港)^1,2, Qiang Cao(曹强)³, Xueying Zhang(张学莹)^1,2,4,‡, Dapeng Zhu(朱大鹏)^1,2,§, and Weisheng Zhao(赵巍胜)^1,2

1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
2 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China;
3 Spintronics Institute, University of Jinan, Jinan 250022, China;
4 Truth Instruments Co. Ltd., Qingdao 266000, Chin

收稿日期:2021-07-11 修回日期:2021-08-23 接受日期:2021-08-27 出版日期:2021-12-03 发布日期:2021-12-18
通讯作者: Xueying Zhang, Dapeng Zhu E-mail:xueying.zhang@buaa.edu.cn;zhudp@buaa.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11904017, 11974145, 51901008, and 12004024), Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020ZD28), platform from Qingdao Science and Technology Commission, and the Fundamental Research Funds for the Central Universities of China.

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China;
2 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China;
3 Spintronics Institute, University of Jinan, Jinan 250022, China;
4 Truth Instruments Co. Ltd., Qingdao 266000, Chin

Received:2021-07-11 Revised:2021-08-23 Accepted:2021-08-27 Online:2021-12-03 Published:2021-12-18
Contact: Xueying Zhang, Dapeng Zhu E-mail:xueying.zhang@buaa.edu.cn;zhudp@buaa.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11904017, 11974145, 51901008, and 12004024), Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020ZD28), platform from Qingdao Science and Technology Commission, and the Fundamental Research Funds for the Central Universities of China.

摘要/Abstract

摘要： Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect. However, the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process, or the non-electric approach of Kerr imaging technique. Here, we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field. In this case, the symmetry of MR is broken, resulting in a resistance difference for opposite magnetization orientations. Moreover, the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀) and the topological insulator/ferromagnet (Bi₂Se₃/Ni₂₀Fe₈₀). Our work simplifies the characterization process of the in-plane magnetization switching, which can promote the development of SOT-based devices.

关键词: magnetoresistance, in-plane magnetization switching, electrical detection

Abstract: Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect. However, the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process, or the non-electric approach of Kerr imaging technique. Here, we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field. In this case, the symmetry of MR is broken, resulting in a resistance difference for opposite magnetization orientations. Moreover, the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀) and the topological insulator/ferromagnet (Bi₂Se₃/Ni₂₀Fe₈₀). Our work simplifies the characterization process of the in-plane magnetization switching, which can promote the development of SOT-based devices.

Key words: magnetoresistance, in-plane magnetization switching, electrical detection

中图分类号: (Magnetotransport phenomena; materials for magnetotransport)

75.47.-m

85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields) 71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

Runrun Hao(郝润润), Kun Zhang(张昆), Yinggang Li(李迎港), Qiang Cao(曹强), Xueying Zhang(张学莹), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜). Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement[J]. 中国物理B, 2022, 31(1): 17502-017502.

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Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

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