中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47504-.doi: 10.1088/1674-1056/abdea2

• • 上一篇    下一篇

  

  • 收稿日期:2020-12-29 修回日期:2021-01-19 接受日期:2021-01-22 出版日期:2021-03-16 发布日期:2021-03-24

Experiments and SPICE simulations of double MgO-based perpendicular magnetic tunnel junction

Qiuyang Li(李求洋)1, Penghe Zhang(张蓬鹤)1, Haotian Li(李浩天)2,†, Lina Chen(陈丽娜)2,3, Kaiyuan Zhou(周恺元)2, Chunjie Yan(晏春杰)2, Liyuan Li(李丽媛)2, Yongbing Xu(徐永兵)4, Weixin Zhang(张卫欣)5, Bo Liu(刘波)6, Hao Meng(孟浩)6, Ronghua Liu(刘荣华)2,‡, and Youwei Du(都有为)2   

  1. 1 China Electric Power Research Institute, Beijing 100192, China;
    2 School of Physics, Nanjing University, Nanjing 210093, China;
    3 School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    4 School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China;
    5 State Grid Tianjin Electric Power Company, Tianjin 300384, China;
    6 Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Zhejiang 311300, China
  • Received:2020-12-29 Revised:2021-01-19 Accepted:2021-01-22 Online:2021-03-16 Published:2021-03-24
  • Contact: †Corresponding author. E-mail: lht_phy@smail.nju.edu.cn ‡Corresponding author. E-mail: rhliu@nju.edu.cn
  • Supported by:
    Project supported by State Grid Corporation of China under the 2018 Science and Technology Project of State Grid Corporation: Research on electromagnetic measurement technology based on EIT and TMR (Grant No. JL71-18-007).

RichHTML

1

PDF (PC)

434

赞

Abstract: We investigate properties of perpendicular anisotropy magnetic tunnel junctions (pMTJs) with a stack structure MgO/CoFeB/Ta/CoFeB/MgO as the free layer (or recording layer), and obtain the necessary device parameters from the tunneling magnetoresistance (TMR) vs. field loops and current-driven magnetization switching experiments. Based on the experimental results and device parameters, we further estimate current-driven switching performance of pMTJ including switching time and power, and their dependence on perpendicular magnetic anisotropy and damping constant of the free layer by SPICE-based circuit simulations. Our results show that the pMTJ cells exhibit a less than 1 ns switching time and write energies < 1.4 pJ; meanwhile the lower perpendicular magnetic anisotropy (PMA) and damping constant can further reduce the switching time at the studied range of damping constant α < 0.1. Additionally, our results demonstrate that the pMTJs with the thermal stability factor $\simeq 73$ can be easily transformed into spin-torque nano-oscillators from magnetic memory as microwave sources or detectors for telecommunication devices.

Key words: magnetic tunnel junctions, magnetic tunnel junction (MTJ) model, switching time, spin torque nano-oscillator

中图分类号:  (Magnetotransport phenomena; materials for magnetotransport)

  • 75.47.-m
75.70.-i (Magnetic properties of thin films, surfaces, and interfaces) 75.75.-c (Magnetic properties of nanostructures) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)