中国物理B ›› 2000, Vol. 9 ›› Issue (3): 222-224.doi: 10.1088/1009-1963/9/3/012

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

InAs SELF-ASSEMBLED NANOSTRUCTURES GROWN ON InP(001)

李月法, 刘峰奇, 徐波, 林峰, 吴巨, 姜卫红, 丁鼎, 王占国   

  1. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:1999-09-07 出版日期:2005-06-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 69736010).

InAs SELF-ASSEMBLED NANOSTRUCTURES GROWN ON InP(001)

Li Yue-fa (李月法), Liu Feng-qi (刘峰奇), Xu Bo (徐波), Lin Feng (林峰), Wu Jü (吴巨), Jiang Wei-hong (姜卫红), Ding Ding (丁鼎), Wang Zhan-guo (王占国)   

  1. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:1999-09-07 Online:2005-06-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 69736010).

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摘要： The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.

Abstract: The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.

中图分类号:  (Transmission electron microscopy (TEM))

  • 68.37.Lp
68.37.Ps (Atomic force microscopy (AFM)) 68.47.Fg (Semiconductor surfaces) 81.07.Ta (Quantum dots) 81.07.Vb (Quantum wires) 81.16.Dn (Self-assembly)