中国物理B ›› 2007, Vol. 16 ›› Issue (6): 1731-1735.doi: 10.1088/1009-1963/16/6/042

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Micromagnetic simulation for high field sensors with perpendicular magnetizations

刘要稳1, 金伟2   

  1. (1)Department of Physics, Tongji University, Shanghai {rm 200092, China; (2)Department of Physics, Tongji University, Shanghai {rm 200092, China;College of Physics and Communication Electronics, Anhui Normal University, Wuhu 241000, China
  • 收稿日期:2006-09-23 修回日期:2006-11-28 出版日期:2007-06-20 发布日期:2007-06-20
  • 基金资助:
    Project supported by the Nature Science Foundation of China (Grant No~10404019) and by the Science and Technology Committee of Shanghai (Grant No~05PJ14090).

Micromagnetic simulation for high field sensors with perpendicular magnetizations

Jin Wei(金伟)a)b) and Liu Yao-Wen(刘要稳)a)†   

  1. a Department of Physics, Tongji University, Shanghai {rm 200092, China; b College of Physics and Communication Electronics, Anhui Normal University, Wuhu 241000, China
  • Received:2006-09-23 Revised:2006-11-28 Online:2007-06-20 Published:2007-06-20
  • Supported by:
    Project supported by the Nature Science Foundation of China (Grant No~10404019) and by the Science and Technology Committee of Shanghai (Grant No~05PJ14090).

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摘要： In this paper, we present a micromagnetic design for high field sensors. The hard layer of the sensors is L1$_{0}$--FePt which is magnetized perpendicularly to film plane and the sense layer is NiFe which is magnetized in the film plane. The magnetization configurations of the hard and sense layers at different external magnetic fields have been simulated. In micromagnetic simulation, the sense field up to one tesla can be reached by using this sensor. We find that whether the sensor has a symmetric or an asymmetric field-sensing window is determined by the coercive field of the hard layer and the demagnetizing field of the sense layer.

Abstract: In this paper, we present a micromagnetic design for high field sensors. The hard layer of the sensors is L1$_{0}$--FePt which is magnetized perpendicularly to film plane and the sense layer is NiFe which is magnetized in the film plane. The magnetization configurations of the hard and sense layers at different external magnetic fields have been simulated. In micromagnetic simulation, the sense field up to one tesla can be reached by using this sensor. We find that whether the sensor has a symmetric or an asymmetric field-sensing window is determined by the coercive field of the hard layer and the demagnetizing field of the sense layer.

Key words: micromagnetic simulation, giant magnetoresistive, coercivity, demagnetizing field

中图分类号:  (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

  • 07.07.Df
75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 85.75.Ss (Magnetic field sensors using spin polarized transport)