中国物理B ›› 2007, Vol. 16 ›› Issue (2): 548-552.doi: 10.1088/1009-1963/16/2/044

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Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

吕茂水, 庞智勇, 修显武, 戴瑛, 韩圣浩   

  1. School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2005-11-10 修回日期:2006-08-24 出版日期:2007-02-20 发布日期:2007-02-20
  • 基金资助:
    Project supported by the National Key Basic Research and Development Programme of China (Grant No 2001CB610504) and the National Natural Science Foundation of China (Grant Nos 60576039 and 10374060).

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Lü Mao-Shui(吕茂水), Pang Zhi-Yong(庞智勇), Xiu Xian-Wu(修显武), Dai Ying(戴瑛), and Han Sheng-Hao(韩圣浩)†   

  1. School of Physics and Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2005-11-10 Revised:2006-08-24 Online:2007-02-20 Published:2007-02-20
  • Supported by:
    Project supported by the National Key Basic Research and Development Programme of China (Grant No 2001CB610504) and the National Natural Science Foundation of China (Grant Nos 60576039 and 10374060).

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摘要： Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07×10-3\Omegacm at an RF power of 100W with a Hall mobility of 16cm2V-1s-1 and a carrier concentration of 1.95×1020cm-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33eV for the films deposited at different RF powers.

关键词: sputtering, zirconium, zinc oxide, transparent conducting films

Abstract: Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07×10-3$\Omega$cm at an RF power of 100W with a Hall mobility of 16cm2V-1s-1 and a carrier concentration of 1.95×1020cm-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33eV for the films deposited at different RF powers.

Key words: sputtering, zirconium, zinc oxide, transparent conducting films

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
73.50.Jt (Galvanomagnetic and other magnetotransport effects) 73.61.-r (Electrical properties of specific thin films) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.-w (Optical properties of specific thin films) 81.15.Cd (Deposition by sputtering)