中国物理B ›› 2005, Vol. 14 ›› Issue (5): 1041-1043.doi: 10.1088/1009-1963/14/5/033

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Fabrication and characteristics of Ni-germanide Schottky contacts with Ge　　　　　　　　　　　　　　　　

韩德栋, 刘晓彦, 康晋锋, 夏志良, 杜刚, 韩汝琦   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China,
  • 收稿日期:2004-11-11 修回日期:2005-01-26 出版日期:2005-05-19 发布日期:2005-05-19
  • 基金资助:
    国家自然科学基金资助90307006

Fabrication and characteristics of Ni-germanide Schottky contacts with Ge

Han De-Dong (韩德栋), Liu Xiao-Yan (刘晓彦), Kang Jin-Feng (康晋锋), Xia Zhi-Liang (夏志良), Du Gang (杜刚), Han Ru-Qi (韩汝琦)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China,
  • Received:2004-11-11 Revised:2005-01-26 Online:2005-05-19 Published:2005-05-19
  • Supported by:
    国家自然科学基金资助90307006

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摘要： In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere from 300 to 500oC in a furnace. The results of x-ray diffraction (XRD) show that the Ni germanides were formed and the diffraction line of (111) were observed in all samples. The structure of Ni germanide is orthorhombic with lattice parameters a=5.811, b=5.381, c=3.428. However, the lines (121) and (002) were observed only in the samples annealed at a temperature higher than 400oC. The influence of annealing temperature on the electrical properties of Ni germanide Schottky barrier diodes on n-Ge (100) substrate was investigated. Experimental results indicate that Schottky barrier diodes on n-Ge (100) with current-voltage (I-V) rectifier characteristics were obtained. The Ion/Ioff ratio of the Schokky diode obtained by using a 300oC annealing process is the highest. The Schottky barrier heights were evaluated by the capacitance-voltage method.

关键词: nickel germanide, Schottky contact

Abstract: In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere from 300 to 500oC in a furnace. The results of x-ray diffraction (XRD) show that the Ni germanides were formed and the diffraction line of (111) were observed in all samples. The structure of Ni germanide is orthorhombic with lattice parameters a=5.811, b=5.381, c=3.428. However, the lines (121) and (002) were observed only in the samples annealed at a temperature higher than 400oC. The influence of annealing temperature on the electrical properties of Ni germanide Schottky barrier diodes on n-Ge (100) substrate was investigated. Experimental results indicate that Schottky barrier diodes on n-Ge (100) with current-voltage (I-V) rectifier characteristics were obtained. The Ion/Ioff ratio of the Schokky diode obtained by using a 300oC annealing process is the highest. The Schottky barrier heights were evaluated by the capacitance-voltage method.

Key words: nickel germanide, Schottky contact

中图分类号: 

  • 7360