PEDOT:PSS Schottky contacts on annealed ZnO films

doi:10.1088/1674-1056/20/4/047301

中国物理B ›› 2011, Vol. 20 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/20/4/047301

PEDOT:PSS Schottky contacts on annealed ZnO films

周岳亮¹, 陈聪¹, 朱亚彬², 胡伟², 纳杰², 何帆²

(1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)School of Science, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2010-10-12 修回日期:2010-12-07 出版日期:2011-04-15 发布日期:2011-04-15
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. 2009JBM098).

PEDOT:PSS Schottky contacts on annealed ZnO films

Zhu Ya-Bin(朱亚彬)^a)†, Hu Wei(胡伟)^a), Na Jie(纳杰)^a), He Fan(何帆)^a), Zhou Yue-Liang(周岳亮)^b), and Chen Cong(陈聪)^b)

^a School of Science, Beijing Jiaotong University, Beijing 100044, China; ^b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2010-10-12 Revised:2010-12-07 Online:2011-04-15 Published:2011-04-15
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. 2009JBM098).

摘要/Abstract

摘要： Polycrystalline ZnO and ITO films on SiO₂ substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current-voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n=1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 ℃, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO₂. The results are useful for applications such as metal-semiconductor field-effect transistors and UV photodetectors.

关键词: Schottky contacts, rectifying characteristic, annealed ZnO film

Abstract: Polycrystalline ZnO and ITO films on SiO₂ substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current–voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n=1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 oC, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO₂. The results are useful for applications such as metal–semiconductor field-effect transistors and UV photodetectors.

Key words: Schottky contacts, rectifying characteristic, annealed ZnO film

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

73.61.Ga (II-VI semiconductors) 73.50.-h (Electronic transport phenomena in thin films)

朱亚彬, 胡伟, 纳杰, 何帆, 周岳亮, 陈聪. PEDOT:PSS Schottky contacts on annealed ZnO films[J]. 中国物理B, 2011, 20(4): 47301-047301.

Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) . PEDOT:PSS Schottky contacts on annealed ZnO films[J]. Chin. Phys. B, 2011, 20(4): 47301-047301.

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PEDOT:PSS Schottky contacts on annealed ZnO films

PEDOT:PSS Schottky contacts on annealed ZnO films

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