中国物理B ›› 2005, Vol. 14 ›› Issue (1): 181-185.doi: 10.1088/1009-1963/14/1/033

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Field emission from zinc oxide nanowires

陈亮, 张耿民, 王鸣生, 张琦锋   

  1. Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing,100871, China
  • 收稿日期:2004-04-14 修回日期:2004-06-16 出版日期:2005-01-20 发布日期:2005-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60128101, 50202002 and 60171025), the Natural Science Foundation of Beijing, China (Grant No 4032012), and the State Key Development Programme for Basic Research of China (G

Field emission from zinc oxide nanowires

Chen Liang (陈亮), Zhang Geng-Min (张耿民), Wang Ming-Sheng (王鸣生), Zhang Qi-Feng (张琦锋)   

  1. Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  • Received:2004-04-14 Revised:2004-06-16 Online:2005-01-20 Published:2005-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60128101, 50202002 and 60171025), the Natural Science Foundation of Beijing, China (Grant No 4032012), and the State Key Development Programme for Basic Research of China (G

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摘要： An array of random-oriented zinc oxide nanowires (ZnO NWs) was fabricated on silicon substrate by thermal evaporation. After a thermal evaporation process, the silicon substrate was covered with a large number of uniformly distributed ZnO islands, from which non-aligned NWs with a diameter of several ten nanometres were grown. During this process, the temperature around the substrate was intentionally kept below 500$^\circ$C for practical consideration. From these ZnO NWs field emission was achieved. The turn-on field, under which a 10$\mu $A/cm$^{2}$ current density was extracted, was measured to be 3.0V/$\mu$m. Also, the emission site distribution was investigated using the transparent anode technique. The field emission was observed to have occurred from the whole sample surface. These results suggest that ZnO NWs have great potential application in flat panel displays.

关键词: zinc oxide nanowires, field emission, thermal evaporation

Abstract: An array of random-oriented zinc oxide nanowires (ZnO NWs) was fabricated on silicon substrate by thermal evaporation. After a thermal evaporation process, the silicon substrate was covered with a large number of uniformly distributed ZnO islands, from which non-aligned NWs with a diameter of several ten nanometres were grown. During this process, the temperature around the substrate was intentionally kept below 500$^\circ$C for practical consideration. From these ZnO NWs field emission was achieved. The turn-on field, under which a 10$\mu $A/cm$^{2}$ current density was extracted, was measured to be 3.0V/$\mu$m. Also, the emission site distribution was investigated using the transparent anode technique. The field emission was observed to have occurred from the whole sample surface. These results suggest that ZnO NWs have great potential application in flat panel displays.

Key words: zinc oxide nanowires, field emission, thermal evaporation

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  • 6416