中国物理B ›› 2004, Vol. 13 ›› Issue (5): 725-730.doi: 10.1088/1009-1963/13/5/026

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Deposition behaviour of single Si adatom on p(2×2) Si(100) surface

黄燕1, 朱晓焱2   

  1. (1)Department of Physics, Soochow University, Suzhou 215006, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)Department of Physics, Soochow University, Suzhou 215006, China; State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • 收稿日期:2003-07-21 修回日期:2003-12-26 出版日期:2004-05-06 发布日期:2005-07-06
  • 基金资助:
    Project supported by the Natural Science Foundation of Education Committee of Jiangsu Province, China (Grant No 00SJB140002).

Deposition behaviour of single Si adatom on p(2×2) Si(100) surface

Huang Yan (黄燕)ab, Zhu Xiao-Yan (朱晓焱)ac   

  1. a Department of Physics, Soochow University, Suzhou 215006, Chinab National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; c State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
  • Received:2003-07-21 Revised:2003-12-26 Online:2004-05-06 Published:2005-07-06
  • Supported by:
    Project supported by the Natural Science Foundation of Education Committee of Jiangsu Province, China (Grant No 00SJB140002).

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摘要： The deposition of a single Si adatom on the p(2×2) reconstructed Si(100) surface has been simulated by an empirical tight-binding method. Using the perfect and defective Si surfaces as the deposition substrates, the deposition energies are mapped out around the research areas. From the calculated energy plots, the binding sites and several possible diffusion paths are achieved. The introduced defects will make the deposition behaviour different from that on the perfect surface.

关键词: dimer vacancy, deposition, diffusion, empirical tight-binding

Abstract: The deposition of a single Si adatom on the p(2×2) reconstructed Si(100) surface has been simulated by an empirical tight-binding method. Using the perfect and defective Si surfaces as the deposition substrates, the deposition energies are mapped out around the research areas. From the calculated energy plots, the binding sites and several possible diffusion paths are achieved. The introduced defects will make the deposition behaviour different from that on the perfect surface.

Key words: dimer vacancy, deposition, diffusion, empirical tight-binding

中图分类号:  (Adsorption kinetics ?)

  • 68.43.Mn
68.43.Jk (Diffusion of adsorbates, kinetics of coarsening and aggregation)