中国物理B ›› 2004, Vol. 13 ›› Issue (2): 264-267.doi: 10.1088/1009-1963/13/2/024

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A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

马书懿1, 陈辉1, 马自军1, 孙爱民1, 萧勇2   

  1. (1)Department of Physics, Northwest Normal University, Lanzhou 730070, China; (2)Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
  • 收稿日期:2003-02-21 修回日期:2003-08-01 出版日期:2004-02-06 发布日期:2005-07-06
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60276015), the Natural Science Foundation of Gansu Province (Grant No ZS021-A25-031-C), the Project of Chinese Ministry of Education, and the Foundation of Northwest Normal Un

A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

Ma Shu-Yi (马书懿)a, Chen Hui (陈辉)a, Xiao Yong (萧勇)b, Ma Zi-Jun (马自军)a, Sun Ai-Min (孙爱民)a   

  1. a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
  • Received:2003-02-21 Revised:2003-08-01 Online:2004-02-06 Published:2005-07-06
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60276015), the Natural Science Foundation of Gansu Province (Grant No ZS021-A25-031-C), the Project of Chinese Ministry of Education, and the Foundation of Northwest Normal Un

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摘要： Ge/SiO_2 and Si/SiO_2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO_2/p-Si and Au/Si/SiO_2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.

关键词: electroluminescence, Ge/SiO_2 film, Si/SiO_2 film

Abstract: Ge/SiO$_2$ and Si/SiO$_2$ films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO$_2$/p-Si and Au/Si/SiO$_2$/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO$_2$/p-Si and Au/Si/SiO$_2$/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.

Key words: electroluminescence, Ge/SiO$_2$ film, Si/SiO$_2$ film

中图分类号:  (Electroluminescence)

  • 78.60.Fi
81.15.Cd (Deposition by sputtering) 78.66.-w (Optical properties of specific thin films)