中国物理B ›› 2003, Vol. 12 ›› Issue (7): 785-788.doi: 10.1088/1009-1963/12/7/315

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

周建军, 江若琏, 沙金, 刘杰, 沈波, 张荣, 郑有炓   

  1. Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2003-01-15 修回日期:2003-03-19 出版日期:2005-03-16 发布日期:2005-03-16
  • 基金资助:
    Project supported by the special Foundation for State Major Research Program of China (Grant No G20000683), the National Natural Science Foundation of China (Grant Nos 60276031, 60136020), and the National High Technology Development Program of China (Gra

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓)   

  1. Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2003-01-15 Revised:2003-03-19 Online:2005-03-16 Published:2005-03-16
  • Supported by:
    Project supported by the special Foundation for State Major Research Program of China (Grant No G20000683), the National Natural Science Foundation of China (Grant Nos 60276031, 60136020), and the National High Technology Development Program of China (Gra

PDF (PC)

506

赞

摘要： GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.

Abstract: GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal－semiconductor－metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.

Key words: GaN, photocurrent, photodetectors, responsivity

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 78.66.Fd (III-V semiconductors) 85.60.Gz (Photodetectors (including infrared and CCD detectors)) 81.05.Ea (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))