中国物理B ›› 2003, Vol. 12 ›› Issue (7): 785-788.doi: 10.1088/1009-1963/12/7/315
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
周建军, 江若琏, 沙金, 刘杰, 沈波, 张荣, 郑有炓
Zhou Jian-Jun (周建军), Jiang Ruo-Lian (江若琏), Sha Jin (沙金), Liu Jie (刘杰), Shen Bo (沈波), Zhang Rong (张荣), Zheng You-Dou (郑有炓)
摘要: GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated using this material. The photocurrent properties of the detectors were measured and analysed. The spectrum response shows a high sensitivity in the wavelength region from 330 to 360nm, with a peak at 358nm and a sharp cutoff near 360nm. The maximum responsivities at 358nm were 700A/W (2V) and 7000A/W (30V). The relationship between responsivity and bias indicates that the responsivity increases linearly with bias until 30V. The influence of the spacing between two electrodes on the detector responsivity was also studied.
中图分类号: (Photoconduction and photovoltaic effects)