Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc

doi:10.1088/1009-1963/11/7/316

中国物理B ›› 2002, Vol. 11 ›› Issue (7): 730-736.doi: 10.1088/1009-1963/11/7/316

Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc

马本堃¹, 刘翠红², 陈传誉³

(1)Department of Physics and Institute of Theoretical Physics, Beijing Normal University, Beijing 100875, China; (2)Department of Physics and Institute of Theoretical Physics, Beijing Normal University, Beijing 100875, China; Department of Physics, Guihuagang Campus, Guangzhou University, Guangzhou 510405, China; (3)Department of Physics, Guihuagang Campus, Guangzhou University, Guangzhou 510405, China

收稿日期:2001-09-19 修回日期:2002-03-25 出版日期:2002-07-12 发布日期:2005-06-12
基金资助:
Project supported by the Natural Science Foundation of Guangdong Province, China (Grant No 980378)

Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc

Liu Cui-Hong (刘翠红)^ab, Ma Ben-Kun (马本堃)^a, Chen Chuan-Yu (陈传誉)^b

^a Department of Physics and Institute of Theoretical Physics, Beijing Normal University, Beijing 100875, China; ^b Department of Physics, Guihuagang Campus, Guangzhou University, Guangzhou 510405, China

Received:2001-09-19 Revised:2002-03-25 Online:2002-07-12 Published:2005-06-12
Supported by:
Project supported by the Natural Science Foundation of Guangdong Province, China (Grant No 980378)

摘要/Abstract

摘要： We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc. Electron states are considered to be confined within a quantum disc with infinite potential barriers. The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Fr?hlich interaction between an electron and a phonon. The selection rules for the Raman process are given. Numerical results and a discussion are also presented for various radii and thicknesses of the disc, and different incident radiation energies.

Abstract: We have carried out a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the surface optical phonon modes in a semiconductor quantum disc. Electron states are considered to be confined within a quantum disc with infinite potential barriers. The optical phonon modes we have adopted are the slab phonon modes by taking into consideration the Fr?hlich interaction between an electron and a phonon. The selection rules for the Raman process are given. Numerical results and a discussion are also presented for various radii and thicknesses of the disc, and different incident radiation energies.

Key words: Raman scattering, surface optical phonon modes, quantum disc

中图分类号: (III-V and II-VI semiconductors)

78.30.Fs

73.21.La (Quantum dots) 73.20.At (Surface states, band structure, electron density of states)

刘翠红, 马本堃, 陈传誉. Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc[J]. 中国物理B, 2002, 11(7): 730-736.

Liu Cui-Hong (刘翠红), Ma Ben-Kun (马本堃), Chen Chuan-Yu (陈传誉). Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc[J]. Chinese Physics, 2002, 11(7): 730-736.

[1]	Jun-Yuan Yang(杨浚源), Zong-Kai Feng(冯棕楷), Ling Jiang(蒋领), Jie Song(宋杰), Xiao-Xun He(何晓珣), Li-Ming Chen(陈黎明), Qing Liao(廖庆), Jiao Wang(王姣), and Bing-Sheng Li(李炳生). Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe¹⁰⁺ ions[J]. 中国物理B, 2022, 31(4): 46103-046103.
[2]	Ruo-Han Li(李若晗), Wu-Xiong Fei(费武雄), Rui Tang(唐锐), Zhao-Xi Wu(吴照玺), Chao Duan(段超), Tao Zhang(张涛), Dan Zhu(朱丹), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure[J]. 中国物理B, 2021, 30(8): 87305-087305.
[3]	. [J]. 中国物理B, 2020, 29(12): 127302-.
[4]	. [J]. 中国物理B, 2020, 29(12): 127701-.
[5]	王中旭, 杜林, 刘俊伟, 王颖, 江芸, 季思蔚, 董士伟, 陈伟伟, 谭骁洪, 李金龙, 李小军, 赵胜雷, 张进成, 郝跃. Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height[J]. 中国物理B, 2020, 29(2): 27301-027301.
[6]	吴晓光. Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field[J]. 中国物理B, 2019, 28(10): 107302-107302.
[7]	刘铭, 王丛, 周立庆. Development of small pixel HgCdTe infrared detectors[J]. 中国物理B, 2019, 28(3): 37804-037804.
[8]	赵胜雷, 王之哲, 陈大正, 王茂俊, 戴扬, 马晓华, 张进成, 郝跃. 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor[J]. 中国物理B, 2019, 28(2): 27301-027301.
[9]	崔海娟, 杨宏春, 徐军, 杨宇明, 杨子贤. Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch[J]. 中国物理B, 2017, 26(1): 17804-017804.
[10]	罗俊, 赵胜雷, 宓珉瀚, 陈伟伟, 侯斌, 张进成, 马晓华, 郝跃. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor[J]. 中国物理B, 2016, 25(2): 27303-027303.
[11]	罗俊, 赵胜雷, 宓珉瀚, 侯斌, 杨晓蕾, 张进成, 马晓华, 郝跃. Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors[J]. 中国物理B, 2015, 24(11): 117305-117305.
[12]	吴晓光, 庞蜜. Landau level transitions in InAs/AlSb/GaSb quantum wells[J]. 中国物理B, 2015, 24(9): 97301-097301.
[13]	姚辰, 徐天鸿, 万文坚, 朱永浩, 曹俊诚. An equivalent circuit model for terahertz quantumcascade lasers: Modeling and experiments[J]. 中国物理B, 2015, 24(9): 94208-094208.
[14]	刘建明, 张洁, 林文禹, 叶孟欣, 冯向旭, 张东炎, Steve Ding, 徐宸科, 刘宝林. Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates[J]. 中国物理B, 2015, 24(5): 57801-057801.
[15]	郑雪峰, 范爽, 陈永和, 康迪, 张建坤, 王冲, 默江辉, 李亮, 马晓华, 张进成, 郝跃. Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation[J]. 中国物理B, 2015, 24(2): 27302-027302.

Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc

Surface optical phonon-assisted electron Raman scattering in a semiconductor quantum disc

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0