中国物理B ›› 1999, Vol. 8 ›› Issue (9): 664-669.doi: 10.1088/1004-423X/8/9/005

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THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALS

迟明军, 窦硕星, 叶佩弦   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:1999-03-05 出版日期:1999-09-15 发布日期:1999-09-20
  • 基金资助:
    Project supported by a Grant for Key Research Projects in the "Climbing" Program from the State Science and Technology Commission of China, and also by the National Natural Science Foundation of China (Grant No. 9734040).

THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALS

Chi Ming-jun (迟明军), Dou Shuo-xing (窦硕星), Ye Pei-xian (叶佩弦)   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:1999-03-05 Online:1999-09-15 Published:1999-09-20
  • Supported by:
    Project supported by a Grant for Key Research Projects in the "Climbing" Program from the State Science and Technology Commission of China, and also by the National Natural Science Foundation of China (Grant No. 9734040).

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摘要： Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.

Abstract: Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SD$\gamma$T/ST$\gamma$D is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SD$\gamma$T/ST$\gamma$D is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.

中图分类号:  (Other nonlinear optical materials; photorefractive and semiconductor materials)

  • 42.70.Nq
71.55.-i (Impurity and defect levels) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))