中国物理B ›› 1995, Vol. 4 ›› Issue (9): 698-704.doi: 10.1088/1004-423X/4/9/008

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

STUDY ON THE OPTICAL PROPERTIES AND HYDROGEN CONTENT OF THE SILICON NITRIDE THIN FILM

陈俊芳, 任兆杏, 丁振峰   

  1. Institute of Plasma Physics, Academia Sinica, Hefei 230031 , China
  • 收稿日期:1994-10-17 出版日期:1995-09-20 发布日期:1995-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

STUDY ON THE OPTICAL PROPERTIES AND HYDROGEN CONTENT OF THE SILICON NITRIDE THIN FILM

CHEN JUN-FANG (陈俊芳), REN ZHAO-XING (任兆杏), DING ZHEN-FENG (丁振峰)   

  1. Institute of Plasma Physics, Academia Sinica, Hefei 230031 , China
  • Received:1994-10-17 Online:1995-09-20 Published:1995-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： The Si3N4 thin films have been manufactured by electron cyclotron resonance plasma enhanced chemical vapour deposition technology on the KBr and (111) monocrystal Si sub-strates, The infrared optical properties of the Si3N4 film have been studied by analysing its IR spectrum. The results show that the Si3N4 film can be used as an antireflexion and an-tireflectiug film of Si surface, The H content of Si3N4 thin film has been estimated from the infrared absorption area. It is obtained that the H content of the Si3N4 film deposited on the KBr substrate is lower than that deposited on Si substrate, and it derceases with increasing deposition temperature. The Raman spectra of the Si3N4 film deposited at 360℃ has also been measured.

Abstract: The Si3N4 thin films have been manufactured by electron cyclotron resonance plasma enhanced chemical vapour deposition technology on the KBr and (111) monocrystal Si sub-strates, The infrared optical properties of the Si3N4 film have been studied by analysing its IR spectrum. The results show that the Si3N4 film can be used as an antireflexion and an-tireflectiug film of Si surface, The H content of Si3N4 thin film has been estimated from the infrared absorption area. It is obtained that the H content of the Si3N4 film deposited on the KBr substrate is lower than that deposited on Si substrate, and it derceases with increasing deposition temperature. The Raman spectra of the Si3N4 film deposited at 360℃ has also been measured.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.66.Nk (Insulators) 78.30.Hv (Other nonmetallic inorganics) 52.77.Dq (Plasma-based ion implantation and deposition) 42.79.Wc (Optical coatings)