中国物理B ›› 1995, Vol. 4 ›› Issue (7): 531-535.doi: 10.1088/1004-423X/4/7/007

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DOPING BEHAVIOR AND ELECTRICAL ACTIVATION OF CARBON IN GaAs

罗晋生1, 严北平2, 章其麟3   

  1. (1)Department of Electronics Engineering, Xi'an Jiaotong University, Xi'an 710049, China; (2)Microelectronics Research Institute, Xidian University, Xi'an 710071, China; (3)The 13th Institute, Ministry of Electronics Industry, Shijiazhuang 050051, China
  • 收稿日期:1994-09-27 出版日期:1995-07-20 发布日期:1995-07-20
  • 基金资助:
    Project supported by the Electronic Science Foundation of Ministry of Electronics Industry.

DOPING BEHAVIOR AND ELECTRICAL ACTIVATION OF CARBON IN GaAs

YAN BEI-PING (严北平)a, LUO JIN-SHENG (罗晋生)b, ZHANG QI-LIN (章其麟)c   

  1. a Microelectronics Research Institute, Xidian University, Xi'an 710071, China; b Department of Electronics Engineering, Xi'an Jiaotong University, Xi'an 710049, China; c The 13th Institute, Ministry of Electronics Industry, Shijiazhuang 050051, China
  • Received:1994-09-27 Online:1995-07-20 Published:1995-07-20
  • Supported by:
    Project supported by the Electronic Science Foundation of Ministry of Electronics Industry.

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摘要： Heavily C-doped GaAs films, grown by metalorganic chemical vapor deposition with CCl4 as external carbon source, have been studied by Hall-effect measurements, high-resolution double-crystal X-ray diffraction, and secondary-ion-mass spectroscopy (SIMS). Comparison among X-ray diffraction and Hall-effect measurements and SIMS results indicates that carbon is preferentially incorporated as acceptor on As lattice sites and electrical activation rate achieves 100%. There is no evidence of carbon incorporated on Ga sites as donors and incorporated on interstitial lattice sites.

Abstract: Heavily C-doped GaAs films, grown by metalorganic chemical vapor deposition with CCl4 as external carbon source, have been studied by Hall-effect measurements, high-resolution double-crystal X-ray diffraction, and secondary-ion-mass spectroscopy (SIMS). Comparison among X-ray diffraction and Hall-effect measurements and SIMS results indicates that carbon is preferentially incorporated as acceptor on As lattice sites and electrical activation rate achieves 100%. There is no evidence of carbon incorporated on Ga sites as donors and incorporated on interstitial lattice sites.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
73.61.Ey (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 61.72.uj (III-V and II-VI semiconductors) 72.20.My (Galvanomagnetic and other magnetotransport effects) 61.72.J- (Point defects and defect clusters)