中国物理B ›› 1994, Vol. 3 ›› Issue (6): 453-459.doi: 10.1088/1004-423X/3/6/008

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FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

陈忠辉, 刘普霖, 周涛, 史国良, 陆卫, 黄醒良, 沈学础   

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1993-07-13 出版日期:1994-06-20 发布日期:1994-06-20

FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GaAs

CHEN ZHONG-HUI (陈忠辉), LIU PU-LIN (刘普霖), ZHOU TAO (周涛), SHI GUO-LIANG (史国良), LU WEI (陆卫), HUANG XING-LIANG (黄醒良), SHEN XUE-CHU (沈学础)   

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • Received:1993-07-13 Online:1994-06-20 Published:1994-06-20

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摘要： We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.

Abstract: We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been performed on high purity n-GaAs at 4.2K. Except for photothermal ionization process, a new far-infrared photoconductivity (FIRPC) mechanism is observed. This photo ionization process is assisted by impact ionization and depends on external electric field. This new mechanism originates from photo-field ionization.

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
68.55.A- (Nucleation and growth) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 73.61.Ey (III-V semiconductors) 61.72.S- (Impurities in crystals)