中国物理B ›› 1995, Vol. 4 ›› Issue (1): 47-53.doi: 10.1088/1004-423X/4/1/007

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

STUDY ON THE STABILITY OF GaAs/AlGaAs SUPERLATTICE STRUCTURE

徐现刚, 黄柏标, 任红文, 蒋民华   

  1. State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:1993-11-10 出版日期:1995-01-20 发布日期:1995-01-20

STUDY ON THE STABILITY OF GaAs/AlGaAs SUPERLATTICE STRUCTURE

XU XIAN-GANG (徐现刚), HUANG BAI-BIAO (黄柏标), REN HONG-WEN (任红文), JIANG MIN-HUA (蒋民华)   

  1. State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:1993-11-10 Online:1995-01-20 Published:1995-01-20

PDF (PC)

433

赞

摘要： This paper reports the stability of GaAs/AlGaAs superlattice structures after theorem annealing, Zn diffusion and MeV Si+ ion implantation. The MeV Si+ ion implantation induced damage in GaAs/AlGaAs superlattices, its annealing properties, and the effects on superlattice structure stability are reported as well. Thermal annealing at 650℃ for 30min has little effect on superlattice structure. Zn diffusion may induce superlattice layer disordering. And annealing at 650℃ for 30min can eliminate damage caused by 2.3MeV,1.5×1015 cm-2 Si+ ion implantation, which cannot induce superlattice layer disordering.

Abstract: This paper reports the stability of GaAs/AlGaAs superlattice structures after theorem annealing, Zn diffusion and MeV Si+ ion implantation. The MeV Si+ ion implantation induced damage in GaAs/AlGaAs superlattices, its annealing properties, and the effects on superlattice structure stability are reported as well. Thermal annealing at 650℃ for 30min has little effect on superlattice structure. Zn diffusion may induce superlattice layer disordering. And annealing at 650℃ for 30min can eliminate damage caused by 2.3MeV,1.5×1015 cm-2 Si+ ion implantation, which cannot induce superlattice layer disordering.

中图分类号:  (Superlattices)

  • 68.65.Cd
61.72.Cc (Kinetics of defect formation and annealing) 61.72.uf (Ge and Si) 61.80.Jh (Ion radiation effects) 66.30.H- (Self-diffusion and ionic conduction in nonmetals)