中国物理B ›› 2019, Vol. 28 ›› Issue (3): 37803-037803.doi: 10.1088/1674-1056/28/3/037803

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Efficient doping modulation of monolayer WS2 for optoelectronic applications

Xinli Ma(马新莉), Rongjie Zhang(张荣杰), Chunhua An(安春华), Sen Wu(吴森), Xiaodong Hu(胡晓东), Jing Liu(刘晶)   

  1. State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
  • 收稿日期:2018-11-28 修回日期:2018-12-27 出版日期:2019-03-05 发布日期:2019-03-05
  • 通讯作者: Jing Liu E-mail:jingliu_1112@tju.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

Efficient doping modulation of monolayer WS2 for optoelectronic applications

Xinli Ma(马新莉), Rongjie Zhang(张荣杰), Chunhua An(安春华), Sen Wu(吴森), Xiaodong Hu(胡晓东), Jing Liu(刘晶)   

  1. State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
  • Received:2018-11-28 Revised:2018-12-27 Online:2019-03-05 Published:2019-03-05
  • Contact: Jing Liu E-mail:jingliu_1112@tju.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 21405109) and Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments, China (Grant No. 1710).

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摘要：

Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D) materials which usually possess thickness-dependent band structures and semiconducting properties. Therefore, for TMDCs to be widely used in electronic and optoelectronic applications, two critical issues need to be addressed, which are thickness-controllable fabrication and doping modulation of TMDCs. In this work, we successfully obtained monolayer WS2 and achieved its efficient doping by chemical vapor deposition and chemical doping, respectively. The n- and p-type dopings of the monolayer WS2 were achieved by drop coating electron donor and acceptor solutions of triphenylphosphine (PPh3) and gold chloride (AuCl3), respectively, on the surface, which donates and captures electrons to/from the WS2 surface through charge transfer, respectively. Both doping effects were investigated in terms of the electrical properties of the fabricated field effect transistors. After chemical doping, the calculated mobility and density of electrons/holes are around 74.6/39.5 cm2·V-1·s-1 and 1.0×1012/4.2×1011 cm-2, respectively. Moreover, we fabricated a lateral WS2 p-n homojunction consisting of non-doped n-type and p-doped p-type regions, which showed great potential for photodetection with a response time of 1.5 s and responsivity of 5.8 A/W at VG=0 V and VD=1 V under 532 nm light illumination.

关键词: two-dimensional materials, tungsten disulfide, chemical doping, homojunction, photodetector

Abstract:

Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D) materials which usually possess thickness-dependent band structures and semiconducting properties. Therefore, for TMDCs to be widely used in electronic and optoelectronic applications, two critical issues need to be addressed, which are thickness-controllable fabrication and doping modulation of TMDCs. In this work, we successfully obtained monolayer WS2 and achieved its efficient doping by chemical vapor deposition and chemical doping, respectively. The n- and p-type dopings of the monolayer WS2 were achieved by drop coating electron donor and acceptor solutions of triphenylphosphine (PPh3) and gold chloride (AuCl3), respectively, on the surface, which donates and captures electrons to/from the WS2 surface through charge transfer, respectively. Both doping effects were investigated in terms of the electrical properties of the fabricated field effect transistors. After chemical doping, the calculated mobility and density of electrons/holes are around 74.6/39.5 cm2·V-1·s-1 and 1.0×1012/4.2×1011 cm-2, respectively. Moreover, we fabricated a lateral WS2 p-n homojunction consisting of non-doped n-type and p-doped p-type regions, which showed great potential for photodetection with a response time of 1.5 s and responsivity of 5.8 A/W at VG=0 V and VD=1 V under 532 nm light illumination.

Key words: two-dimensional materials, tungsten disulfide, chemical doping, homojunction, photodetector

中图分类号:  (Electro-optical effects)

  • 78.20.Jq
42.79.Hp (Optical processors, correlators, and modulators) 42.70.Gi (Light-sensitive materials)