Development of small pixel HgCdTe infrared detectors

doi:10.1088/1674-1056/28/3/037804

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 37804-037804.doi: 10.1088/1674-1056/28/3/037804

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Development of small pixel HgCdTe infrared detectors

Ming Liu(刘铭), Cong Wang(王丛), Li-Qing Zhou(周立庆)

North China Research Institute of Electroptics, Beijing 100015, China

收稿日期:2018-09-12 修回日期:2018-11-26 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Ming Liu E-mail:kaka_851001@163.com

Development of small pixel HgCdTe infrared detectors

Ming Liu(刘铭), Cong Wang(王丛), Li-Qing Zhou(周立庆)

North China Research Institute of Electroptics, Beijing 100015, China

Received:2018-09-12 Revised:2018-11-26 Online:2019-03-05 Published:2019-03-05
Contact: Ming Liu E-mail:kaka_851001@163.com

摘要/Abstract

摘要：

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to 5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

关键词: HgCdTe, infrared detector, small size pixel, readout circuit

Abstract:

Key words: HgCdTe, infrared detector, small size pixel, readout circuit

中图分类号: (III-V and II-VI semiconductors)

78.30.Fs

81.05.Dz (II-VI semiconductors) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.60.Bt (Optoelectronic device characterization, design, and modeling)

刘铭, 王丛, 周立庆. Development of small pixel HgCdTe infrared detectors[J]. 中国物理B, 2019, 28(3): 37804-037804.

Ming Liu(刘铭), Cong Wang(王丛), Li-Qing Zhou(周立庆). Development of small pixel HgCdTe infrared detectors[J]. Chin. Phys. B, 2019, 28(3): 37804-037804.

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Development of small pixel HgCdTe infrared detectors

Development of small pixel HgCdTe infrared detectors

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