Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge2Sb2Te5

doi:10.1088/1674-1056/23/4/048301

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48301-048301.doi: 10.1088/1674-1056/23/4/048301

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅

闫未霞^{a b}, 王良咏^a, 张泽芳^a, 刘卫丽^a, 宋志棠^a

a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2013-06-25 修回日期:2013-09-22 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Integrate Circuit Research Program of China (Grant Nos. 2011ZX02704-002 and 2009ZX02030-001), the Funds from the Science and Technology Council of Shanghai, China (Grant Nos. 0952nm00200 and 10QB1403600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅

Yan Wei-Xia (闫未霞)^{a b}, Wang Liang-Yong (王良咏)^a, Zhang Ze-Fang (张泽芳)^a, Liu Wei-Li (刘卫丽)^a, Song Zhi-Tang (宋志棠)^a

a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China

Received:2013-06-25 Revised:2013-09-22 Online:2014-04-15 Published:2014-04-15
Contact: Wang Liang-Yong E-mail:wly@mail.sim.ac.cn
About author:83.50.jf
Supported by:
Project supported by the National Integrate Circuit Research Program of China (Grant Nos. 2011ZX02704-002 and 2009ZX02030-001), the Funds from the Science and Technology Council of Shanghai, China (Grant Nos. 0952nm00200 and 10QB1403600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

摘要/Abstract

摘要： The effect of iron trichloride (FeCl₃) on chemical mechanical polishing (CMP) of Ge₂Sb₂Te₅ (GST) film is investigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeCl₃ concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H₂O₂-based slurry. This polishing rate trends are inversely correlated with the contact angle data of FeCl₃-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope (AFM) and optical microscope (OM) are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as E_corr and I_corr to analyze chemical reaction between FeCl₃ and GST surface. Finally, it is verified that slurry with FeCl₃ has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature (RT) tests.

关键词: chemical mechanical polishing, iron trichloride, Ge₂Sb₂Te₅

Abstract: The effect of iron trichloride (FeCl₃) on chemical mechanical polishing (CMP) of Ge₂Sb₂Te₅ (GST) film is investigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeCl₃ concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H₂O₂-based slurry. This polishing rate trends are inversely correlated with the contact angle data of FeCl₃-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope (AFM) and optical microscope (OM) are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as E_corr and I_corr to analyze chemical reaction between FeCl₃ and GST surface. Finally, it is verified that slurry with FeCl₃ has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature (RT) tests.

Key words: chemical mechanical polishing, iron trichloride, Ge₂Sb₂Te₅

中图分类号: (Extensional flow and combined shear and extension)

83.50.Jf

闫未霞, 王良咏, 张泽芳, 刘卫丽, 宋志棠. Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅[J]. 中国物理B, 2014, 23(4): 48301-048301.

Yan Wei-Xia (闫未霞), Wang Liang-Yong (王良咏), Zhang Ze-Fang (张泽芳), Liu Wei-Li (刘卫丽), Song Zhi-Tang (宋志棠). Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅[J]. Chin. Phys. B, 2014, 23(4): 48301-048301.

参考文献 16

[1]	Wang L Y, Song Z T, Zhong M, Liu W L, Yan W X, Qin F, He A D and Liu B 2012 Appl. Surf. Sci. 258 5185
[2]	Castro D T, Goux L, Hurkx G A M, Attenborough K, Delhougne R, Lisoni J, Edema F J, Zandt M A A, Wolters R A M, Gravesteijn D J, Verheijen M A, Kaiser M, Weemaes R G R and Wouters D J 2007 Electron Devices Meeting, December 10-12, 2007, Washington, DC, p. 315
[3]	Bez R 2009 Chalcogenide PCM: A Memory Technology for Next Decade IEEE IEDM Technology, December 7-9, 2009, Baltimore, MD, p. 1
[4]	Sun Z M, Zhou J and Ahuja R 2006 Phys. Rev. Lett. 96 055507
[5]	Zhang Z F, Liu W L and Song Z T 2011 J. Vac. Sci. Technol. B 29 011020
[6]	Cui H, Cho J Y, Hwang H S, Lim J H, Park J H, Park H S, Hong K and Park J G 2010 J. Electrochem. Soc. 157 H1036
[7]	Zhong M, Song Z T, Liu B, Feng S L and Chen B 2008 J. Electrochem. Soc. 155 H929
[8]	Krishnan M, Nalaskowski J W and Cook L M 2010 Chem. Rev. 110 178
[9]	Lee T Y, Lee I K, Choi B H and Park Y S 2007 US Patent Application 11967446 1-4
[10]	Cui H, Cho J Y, Hwang H S, Lin J H, Park J H, Park H S, Hong K and Park J G 2011 J. Electrochem. Soc. 158 H666
[11]	He A D, Song Z T, Liu B, Zhong M, Wang L Y, Lü Y G and Feng S L 2012 Chin. Phys. B 22 018503
[12]	Cho Y J, Cui H, Park J H, Yi S H and Park J G 2010 Electrochem. Solid-State Lett. 13 H155
[13]	Shin D H, Lee D H, Jeong M G, Park H S and Lim D S 2012 J. Electrochem. Soc. 159 H349
[14]	Barr T L and Seal S 1995 J. Vac. Sci. Technol. A 13 1239
[15]	Yan W X, Wang L Y, Zhang Z F, He A D, Zhong M, Liu W L, Wu L C and Song Z T 2012 Chin. Phys. Lett. 29 038301
[16]	Bardal E 2003 Corrosion and Protection (New York: Springer) p. 65

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅

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