Formation of ZnGa2O4 films by multilayer deposition and subsequent thermal annealing

doi:10.1088/1674-1056/23/4/048105

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 48105-048105.doi: 10.1088/1674-1056/23/4/048105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing

闫金良, 赵银女, 李超

School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China

收稿日期:2013-08-22 修回日期:2013-09-22 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10974077), the InnovationProject of Shandong Graduate Education, China (Grant No. SDYY13093), and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2010AL026).

Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing

Yan Jin-Liang (闫金良), Zhao Yin-Nü (赵银女), Li Chao (李超)

School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China

Received:2013-08-22 Revised:2013-09-22 Online:2014-04-15 Published:2014-04-15
Contact: Yan Jin-Liang E-mail:yanjinliang8@sina.com
About author:81.15.-z; 68.55.-a; 78.20.-e; 68.60.-p
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10974077), the InnovationProject of Shandong Graduate Education, China (Grant No. SDYY13093), and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2010AL026).

摘要/Abstract

摘要： The Ga₂O₃/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga₂O₃ layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa₂O₄ film is achieved via the annealing of the Ga₂O₃/ZnO multilayer film. The influences of original Ga₂O₃ sublayer thickness on the optical and structural properties of Ga₂O₃/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga₂O₃ sublayer, the optical band-gap of Ga₂O₃/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga₂O₃ and ZnGa₂O₄.

关键词: multilayer films, optical band-gap, optical transmittance, photoluminescence

Abstract: The Ga₂O₃/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga₂O₃ layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa₂O₄ film is achieved via the annealing of the Ga₂O₃/ZnO multilayer film. The influences of original Ga₂O₃ sublayer thickness on the optical and structural properties of Ga₂O₃/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga₂O₃ sublayer, the optical band-gap of Ga₂O₃/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga₂O₃ and ZnGa₂O₄.

Key words: multilayer films, optical band-gap, optical transmittance, photoluminescence

中图分类号: (Methods of deposition of films and coatings; film growth and epitaxy)

81.15.-z

68.55.-a (Thin film structure and morphology) 78.20.-e (Optical properties of bulk materials and thin films) 68.60.-p (Physical properties of thin films, nonelectronic)

闫金良, 赵银女, 李超. Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing[J]. 中国物理B, 2014, 23(4): 48105-048105.

Yan Jin-Liang (闫金良), Zhao Yin-Nü (赵银女), Li Chao (李超). Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing[J]. Chin. Phys. B, 2014, 23(4): 48105-048105.

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Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing

Formation of ZnGa₂O₄ films by multilayer deposition and subsequent thermal annealing

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