Equivalent oxide thickness scaling of Al2O3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

doi:10.1088/1674-1056/22/6/067701

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/22/6/067701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

孙家宝^{a b}, 杨周伟^a, 耿阳^b, 卢红亮^b, 吴汪然^a, 叶向东^a, 张卫^b, 施毅^a, 赵毅^{a c}

a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

收稿日期:2012-09-15 修回日期:2012-12-19 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Program on Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048), the National Science and Technology Major Projects (Grant No. 2009ZX02035), the State Key Laboratory of ASIC and System Project (Grant No. 11MS017), and the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001).

Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Sun Jia-Bao (孙家宝)^{a b}, Yang Zhou-Wei (杨周伟)^a, Geng Yang (耿阳)^b, Lu Hong-Liang (卢红亮)^b, Wu Wang-Ran (吴汪然)^a, Ye Xiang-Dong (叶向东)^a, David Zhang Wei (张卫)^b, Shi Yi (施毅)^a, Zhao Yi (赵毅)^{a c}

a School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received:2012-09-15 Revised:2012-12-19 Online:2013-05-01 Published:2013-05-01
Contact: Lu Hong-Liang, Zhao Yi E-mail:honglianglu@fudan.edu.cn; yzhao@nju.edu.cn
Supported by:
Project supported by the National Program on Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048), the National Science and Technology Major Projects (Grant No. 2009ZX02035), the State Key Laboratory of ASIC and System Project (Grant No. 11MS017), and the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001).

摘要/Abstract

摘要： Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al₂O₃/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.

关键词: Al₂O₃ gate dielectric, ozone post oxidation, equivalent oxide thickness, electrical properties

Abstract: Aluminum-oxide films deposited as gate dielectrics on germanium (Ge) by atomic layer deposition (ALD) were post oxidized in an ozone atmosphere. No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) measurements made after the ozone post oxidation (OPO) treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al₂O₃/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.

Key words: Al₂O₃ gate dielectric, ozone post oxidation, equivalent oxide thickness, electrical properties

中图分类号:

77.55.D-

61.72.uf (Ge and Si) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 68.47.Fg (Semiconductor surfaces)

孙家宝, 杨周伟, 耿阳, 卢红亮, 吴汪然, 叶向东, 张卫, 施毅, 赵毅. Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation[J]. 中国物理B, 2013, 22(6): 67701-067701.

Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅). Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation[J]. Chin. Phys. B, 2013, 22(6): 67701-067701.

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Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

Equivalent oxide thickness scaling of Al₂O₃/Ge metal-oxide-semiconductor capacitors with ozone post oxidation

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