中国物理B ›› 2026, Vol. 35 ›› Issue (4): 48101-048101.doi: 10.1088/1674-1056/ae0636

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High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance

Gengyou Zhao(赵耕右)1,2, Kun Tang(汤琨)1,2,†, Kai Yang(杨凯)1,2, Bo Feng(冯博)1,2, Liangxue Gu(顾梁雪)1,2, Xiang Xiong(熊翔)3, Tao Tao(陶涛)1,2, Bin Liu(刘斌)1,2, Jiandong Ye(叶建东)1,2, Rong Zhang(张荣)1,2, Youdou Zheng(郑有炓)1,2, and Shulin Gu(顾书林)1,2,‡   

  1. 1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, China;
    2 Jiangsu Key Laboratory of Advanced Semiconductors and High Energy-Efficiency Devices, Nanjing 210046, China;
    3 School of Physics, Nanjing University, Nanjing 210008, China
  • 收稿日期:2025-07-07 修回日期:2025-09-11 接受日期:2025-09-12 出版日期:2026-03-24 发布日期:2026-03-24
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 62274084 and 62574106).

High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance

Gengyou Zhao(赵耕右)1,2, Kun Tang(汤琨)1,2,†, Kai Yang(杨凯)1,2, Bo Feng(冯博)1,2, Liangxue Gu(顾梁雪)1,2, Xiang Xiong(熊翔)3, Tao Tao(陶涛)1,2, Bin Liu(刘斌)1,2, Jiandong Ye(叶建东)1,2, Rong Zhang(张荣)1,2, Youdou Zheng(郑有炓)1,2, and Shulin Gu(顾书林)1,2,‡   

  1. 1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, China;
    2 Jiangsu Key Laboratory of Advanced Semiconductors and High Energy-Efficiency Devices, Nanjing 210046, China;
    3 School of Physics, Nanjing University, Nanjing 210008, China
  • Received:2025-07-07 Revised:2025-09-11 Accepted:2025-09-12 Online:2026-03-24 Published:2026-03-24
  • Contact: Kun Tang, Shulin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 62274084 and 62574106).

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摘要： The effect of trace oxygen on the light-doping behavior of boron in diamond films during microwave plasma chemical vapor deposition was experimentally investigated. Boron-doped diamond films were grown continuously under different oxygen concentrations [oxygen/carbon (O/C) $=$ 0%-5%]. When oxygen was added during the diamond doping process, improvements in crystal quality and surface morphology were observed, and residual nitrogen was significantly suppressed. However, further increasing the oxygen concentration could lead to surface defects. We evaluated and discussed the carrier mobility, carrier concentration and boron content of the samples. At room temperature, under the condition of O/C $=$ 4%, the maximum hole mobility reached 1400 cm$^{2}\cdot $V$^{-1}\cdot $s$^{-1}$, and a higher carrier concentration of 1.5 $\times10^{15}$ cm$^{-3}$ was obtained, which is an excellent result compared with all previous studies. In addition, the characteristic peaks that appeared in both low-temperature photoluminescence spectra and absorption spectra were analyzed, and it was found that the characteristic peak at 4.7 eV (270 nm) may correspond to a boron-nitrogen complex, supplementing the effect of boron-doped diamond on defect formation. These findings demonstrate the potential of controlling the boron concentration in diamond films using oxygen concentration in a plasma environment and open avenues for future applications in advanced optoelectronic devices.

关键词: diamond, chemical vapor deposition, impurity concentration, electrical properties, infrared and Raman spectra

Abstract: The effect of trace oxygen on the light-doping behavior of boron in diamond films during microwave plasma chemical vapor deposition was experimentally investigated. Boron-doped diamond films were grown continuously under different oxygen concentrations [oxygen/carbon (O/C) $=$ 0%-5%]. When oxygen was added during the diamond doping process, improvements in crystal quality and surface morphology were observed, and residual nitrogen was significantly suppressed. However, further increasing the oxygen concentration could lead to surface defects. We evaluated and discussed the carrier mobility, carrier concentration and boron content of the samples. At room temperature, under the condition of O/C $=$ 4%, the maximum hole mobility reached 1400 cm$^{2}\cdot $V$^{-1}\cdot $s$^{-1}$, and a higher carrier concentration of 1.5 $\times10^{15}$ cm$^{-3}$ was obtained, which is an excellent result compared with all previous studies. In addition, the characteristic peaks that appeared in both low-temperature photoluminescence spectra and absorption spectra were analyzed, and it was found that the characteristic peak at 4.7 eV (270 nm) may correspond to a boron-nitrogen complex, supplementing the effect of boron-doped diamond on defect formation. These findings demonstrate the potential of controlling the boron concentration in diamond films using oxygen concentration in a plasma environment and open avenues for future applications in advanced optoelectronic devices.

Key words: diamond, chemical vapor deposition, impurity concentration, electrical properties, infrared and Raman spectra

中图分类号:  (Diamond)

  • 81.05.ug
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 61.72.sd (Impurity concentration) 87.15.Pc (Electronic and electrical properties) 78.30.-j (Infrared and Raman spectra)