中国物理B ›› 2025, Vol. 34 ›› Issue (7): 74204-074204.doi: 10.1088/1674-1056/adcdea

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High-power ~ 4.1 μm quantum cascade lasers grown by metal-organic chemical vapor deposition

Chao Wang(王超)1,†, Chenhao Qian(钱晨灏)1, Yang Cheng(程洋)4,5, Junpu Wang(王俊普)4, Xiaoyue Luo(罗晓玥)2, Yuhang Zhang(章宇航)3, Wu Zhao(赵武)5, Fangyuan Sun(孙方圆)2,5, and Jun Wang(王俊)2,4,5,‡   

  1. 1 Faculty of Electronic Information Engineering, Huaiyin Institute of Technology, Huaian 201800, China;
    2 College of Electronic Information, Sichuan University, Chengdu 610041, China;
    3 Southeast University-Monash University Joint Graduate School (Suzhou), Southeast University, Suzhou 215125, China;
    4 National University of Defense Technology, Changsha 410073, China;
    5 Suzhou Everbright Photonics Co., Ltd., Suzhou 215009, China
  • 收稿日期:2025-01-21 修回日期:2025-04-11 接受日期:2025-04-17 出版日期:2025-06-18 发布日期:2025-07-03
  • 通讯作者: Chao Wang, Jun Wang E-mail:chaowang@hyit.edu.cn;wjdz@scu.edu.cn

High-power ~ 4.1 μm quantum cascade lasers grown by metal-organic chemical vapor deposition

Chao Wang(王超)1,†, Chenhao Qian(钱晨灏)1, Yang Cheng(程洋)4,5, Junpu Wang(王俊普)4, Xiaoyue Luo(罗晓玥)2, Yuhang Zhang(章宇航)3, Wu Zhao(赵武)5, Fangyuan Sun(孙方圆)2,5, and Jun Wang(王俊)2,4,5,‡   

  1. 1 Faculty of Electronic Information Engineering, Huaiyin Institute of Technology, Huaian 201800, China;
    2 College of Electronic Information, Sichuan University, Chengdu 610041, China;
    3 Southeast University-Monash University Joint Graduate School (Suzhou), Southeast University, Suzhou 215125, China;
    4 National University of Defense Technology, Changsha 410073, China;
    5 Suzhou Everbright Photonics Co., Ltd., Suzhou 215009, China
  • Received:2025-01-21 Revised:2025-04-11 Accepted:2025-04-17 Online:2025-06-18 Published:2025-07-03
  • Contact: Chao Wang, Jun Wang E-mail:chaowang@hyit.edu.cn;wjdz@scu.edu.cn

摘要: The authors report the development of a $\lambda \sim 4.1$ μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced InGaAs/InAlAs materials. A device with a 7.5 mm cavity length and 6.5 μm ridge width, bonded to an aluminum nitride heatsink, achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at 288 K in continuous-wave (CW) operation, with corresponding maximum wall-plug efficiencies of 14.8% and 9.3%. A kink is observed in the power-current curve under CW operation, which is absent in pulsed operation. Near-field results show that in CW operation, the horizontal beam quality factor $M^{2}$ fluctuates with current, indicating mode instability and high-order lateral mode excitation, while in pulsed mode, the horizontal $M^{2}$ remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.

关键词: mid-infrared, quantum cascade laser, metal-organic chemical vapor deposition, beam quality

Abstract: The authors report the development of a $\lambda \sim 4.1$ μm quantum cascade laser grown by metal-organic chemical vapor deposition using strain-balanced InGaAs/InAlAs materials. A device with a 7.5 mm cavity length and 6.5 μm ridge width, bonded to an aluminum nitride heatsink, achieves maximum output powers of 3.4 W at 288 K in pulsed mode and 1.6 W at 288 K in continuous-wave (CW) operation, with corresponding maximum wall-plug efficiencies of 14.8% and 9.3%. A kink is observed in the power-current curve under CW operation, which is absent in pulsed operation. Near-field results show that in CW operation, the horizontal beam quality factor $M^{2}$ fluctuates with current, indicating mode instability and high-order lateral mode excitation, while in pulsed mode, the horizontal $M^{2}$ remains stable around 1.3 as the current increases from 1.4 A to 1.9 A.

Key words: mid-infrared, quantum cascade laser, metal-organic chemical vapor deposition, beam quality

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Pk (Continuous operation) 95.85.Hp (Infrared (3-10 μm))