中国物理B ›› 2025, Vol. 34 ›› Issue (11): 118101-118101.doi: 10.1088/1674-1056/adfb55

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Effect of metal solvent and growth surface on boron doping efficiency and impurity incorporation in HPHT-grown diamond single crystals

Hongbo Li(李鸿波)1, Wenhao Wang(王文豪)1, Yadong Li(李亚东)2, Liangchao Chen(陈良超)1,†, Zhuangfei Zhang(张壮飞)1, Yuewen Zhang(张跃文)1, Qianqian Wang(王倩倩)1, Biao Wan(万彪)1, Chunlei Du(杜春雷)2, and Chao Fang(房超)1,‡   

  1. 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China;
    2 College of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
  • 收稿日期:2025-05-14 修回日期:2025-08-11 接受日期:2025-08-14 发布日期:2025-10-30
  • 基金资助:
    The project was supported by the National Natural Science Foundation of China (Grant Nos. 12274373 and 12274372), the Natural Science Foundation of Henan Province (Grant Nos. 242300421155 and 252300421475), the Key Research Projects of Higher Education Institutions in Henan Province (Grant No. 25A140008), the Natural Science Foundation of Chongqing, China (Grant Nos. CSTB2023NSCQ-LZX0100 and CSTB2023NSCQMSX0362), Central Plains Science and Technology Innovation Youth Top Notch Talents, and Independent Innovation Project for Graduate Students of Zhengzhou University (Grant No. 20250450).

Effect of metal solvent and growth surface on boron doping efficiency and impurity incorporation in HPHT-grown diamond single crystals

Hongbo Li(李鸿波)1, Wenhao Wang(王文豪)1, Yadong Li(李亚东)2, Liangchao Chen(陈良超)1,†, Zhuangfei Zhang(张壮飞)1, Yuewen Zhang(张跃文)1, Qianqian Wang(王倩倩)1, Biao Wan(万彪)1, Chunlei Du(杜春雷)2, and Chao Fang(房超)1,‡   

  1. 1 Key Laboratory of Material Physics of Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China;
    2 College of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
  • Received:2025-05-14 Revised:2025-08-11 Accepted:2025-08-14 Published:2025-10-30
  • Contact: Liangchao Chen, Chao Fang E-mail:chenlc@zzu.edu.cn;fangchao1989@zzu.edu.cn
  • Supported by:
    The project was supported by the National Natural Science Foundation of China (Grant Nos. 12274373 and 12274372), the Natural Science Foundation of Henan Province (Grant Nos. 242300421155 and 252300421475), the Key Research Projects of Higher Education Institutions in Henan Province (Grant No. 25A140008), the Natural Science Foundation of Chongqing, China (Grant Nos. CSTB2023NSCQ-LZX0100 and CSTB2023NSCQMSX0362), Central Plains Science and Technology Innovation Youth Top Notch Talents, and Independent Innovation Project for Graduate Students of Zhengzhou University (Grant No. 20250450).

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摘要： To enhance boron doping efficiency and reduce metal impurities in diamonds, selecting an appropriate metal solvent is essential for producing p-type diamonds using the high-pressure high-temperature (HPHT) method. This paper presents a detailed study of the properties and characteristics of boron-doped diamond (BDD) single crystals grown using FeNi and FeCo solvents through the HPHT method. The results indicate that, with the same TiB2 addition ratio, BDD crystals grown using FeCo solvent have a higher concentration of uncompensated boron ions, resulting in improved boron doping efficiency. Additionally, by growing BDD in the same synthesis environment (FeCo-3 wt% TiB2) using (111) and (100) seed crystals as growth surfaces, it was found that the boron content in the crystal grown from the (100) seed crystal was higher than that in the crystal grown from the (111) seed crystal. Additionally, the crystals grown with the FeCo solvent contained fewer metal elements (Fe and Co) compared to those produced with the FeNi solvent (Fe and Ni), which supported the growth of high-quality BDD single crystals. This indicated that the choice of growth planes significantly influences the incorporation of boron in diamonds. Our findings hold significant research value for the development of high-quality p-type diamond semiconductors using the HPHT method.

关键词: boron doping, diamond single crystal, high-pressure high-temperature (HPHT), metal solvent

Abstract: To enhance boron doping efficiency and reduce metal impurities in diamonds, selecting an appropriate metal solvent is essential for producing p-type diamonds using the high-pressure high-temperature (HPHT) method. This paper presents a detailed study of the properties and characteristics of boron-doped diamond (BDD) single crystals grown using FeNi and FeCo solvents through the HPHT method. The results indicate that, with the same TiB2 addition ratio, BDD crystals grown using FeCo solvent have a higher concentration of uncompensated boron ions, resulting in improved boron doping efficiency. Additionally, by growing BDD in the same synthesis environment (FeCo-3 wt% TiB2) using (111) and (100) seed crystals as growth surfaces, it was found that the boron content in the crystal grown from the (100) seed crystal was higher than that in the crystal grown from the (111) seed crystal. Additionally, the crystals grown with the FeCo solvent contained fewer metal elements (Fe and Co) compared to those produced with the FeNi solvent (Fe and Ni), which supported the growth of high-quality BDD single crystals. This indicated that the choice of growth planes significantly influences the incorporation of boron in diamonds. Our findings hold significant research value for the development of high-quality p-type diamond semiconductors using the HPHT method.

Key words: boron doping, diamond single crystal, high-pressure high-temperature (HPHT), metal solvent

中图分类号:  (Diamond)

  • 81.05.ug
74.62.Dh (Effects of crystal defects, doping and substitution) 61.72.S- (Impurities in crystals) 67.80.dj (Defects, impurities, and diffusion)