中国物理B ›› 2025, Vol. 34 ›› Issue (9): 96401-096401.doi: 10.1088/1674-1056/adcf8a
所属专题： SPECIAL TOPIC — Heat conduction and its related interdisciplinary areas
Tunable thermal conductivity and mechanical properties of metastable silicon by phase engineering
Guoshuai Du(杜国帅)1,2,†, Yubing Du(杜玉冰)1,2,†, Jiaxin Ming(明嘉欣)1,3, Zhixi Zhu(朱芷希)4, Jiaohui Yan(闫皎辉)4, Jiayin Li(李嘉荫)1,3, Tiansong Zhang(张天颂)1,2, Lina Yang(杨哩娜)2,§, Ke Jin(靳柯)1,4, and Yabin Chen(陈亚彬)1,2,5,‡
- 1 Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, China;
2 School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China;
3 School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China;
4 School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;
5 Beijing Institute of Technology Chongqing Institute of Microelectronics and Microsystems, Chongqing 400030, China
Tunable thermal conductivity and mechanical properties of metastable silicon by phase engineering
Guoshuai Du(杜国帅)1,2,†, Yubing Du(杜玉冰)1,2,†, Jiaxin Ming(明嘉欣)1,3, Zhixi Zhu(朱芷希)4, Jiaohui Yan(闫皎辉)4, Jiayin Li(李嘉荫)1,3, Tiansong Zhang(张天颂)1,2, Lina Yang(杨哩娜)2,§, Ke Jin(靳柯)1,4, and Yabin Chen(陈亚彬)1,2,5,‡
- 1 Advanced Research Institute of Multidisciplinary Sciences (ARIMS), Beijing Institute of Technology, Beijing 100081, China;
2 School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China;
3 School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China;
4 School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;
5 Beijing Institute of Technology Chongqing Institute of Microelectronics and Microsystems, Chongqing 400030, China
摘要： The extensive applications of cubic silicon in flexible transistors and infrared detectors are greatly hindered by its intrinsic properties. Metastable silicon phases, such as Si-III, IV, and XII, prepared using extreme pressure methods, provide a unique "genetic bank" with diverse structures and exotic characteristics. However, exploration of their inherent physical properties remains underdeveloped. Herein, we demonstrate the phase engineering strategy to modulate the thermal conductivity and mechanical properties of metastable silicon. The thermal conductivity, obtained via the Raman optothermal approach, exhibits broad tunability across various Si-I, III, XII, and IV phases. The hardness and Young's modulus of Si-IV are significantly greater than those of the Si-III/XII mixture, as confirmed by the nanoindentation technique. Moreover, it was found that pressure-induced structural defects can substantially degrade the thermal and mechanical properties of silicon. This systematic investigation offers a feasible route for designing novel semiconductors and further advancing their desirable applications in advanced nanodevices and mechanical transducers.
中图分类号: (Metastable phases)
- 64.60.My